π-Stacked Oligo(phenylene vinylene)s Based on Pseudo-Geminal Substituted [2.2]Paracyclophanes: Impact of Interchain Geometry and Interactions on the Electronic Properties

2012 ◽  
Vol 51 (46) ◽  
pp. 11629-11632 ◽  
Author(s):  
Sukrit Mukhopadhyay ◽  
Subodh P. Jagtap ◽  
Veaceslav Coropceanu ◽  
Jean-Luc Brédas ◽  
David M. Collard
Keyword(s):  
Electronic Properties ◽  
Phenylene Vinylene

The Effects of Structural and Microenvironmental Disorder on the Electronic Properties of Poly[2-methoxy,5-(2‘-ethyl-hexoxy)-1,4-phenylene vinylene] (MEH−PPV) and Related Oligomers

2003 ◽  
Vol 107 (22) ◽  
pp. 5133-5143 ◽  
Author(s):  
Sebastian Wachsmann-Hogiu ◽  
Linda A. Peteanu ◽  
Limin Angela Liu ◽  
David J. Yaron ◽  
Jurjen Wildeman
Keyword(s):  
Electronic Properties ◽  
Phenylene Vinylene

Electronic properties of neutral and polaron states in poly(p-phenylene vinylene)

1997 ◽  
Vol 85 (1-3) ◽  
pp. 1133-1134 ◽  
Author(s):  
Y. Shimoi ◽  
S. Abe ◽  
S. Kuroda ◽  
K. Murata
Keyword(s):  
Electronic Properties ◽  
Phenylene Vinylene

π-Stacked Oligo(phenylene vinylene)s Based on Pseudo-Geminal Substituted [2.2]Paracyclophanes: Impact of Interchain Geometry and Interactions on the Electronic Properties

2012 ◽  
Vol 124 (46) ◽  
pp. 11797-11800 ◽  
Author(s):  
Sukrit Mukhopadhyay ◽  
Subodh P. Jagtap ◽  
Veaceslav Coropceanu ◽  
Jean-Luc Brédas ◽  
David M. Collard
Keyword(s):  
Electronic Properties ◽  
Phenylene Vinylene

Impact of the Computational Method on the Geometric and Electronic Properties of Oligo(phenylene vinylene) Radical Cations

2005 ◽  
Vol 109 (43) ◽  
pp. 20237-20243 ◽  
Author(s):  
V. M. Geskin ◽  
F. C. Grozema ◽  
L. D. A. Siebbeles ◽  
D. Beljonne ◽  
J. L. Brédas ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cations ◽  
Computational Method ◽  
Phenylene Vinylene ◽  
Geometric And Electronic Properties

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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