Bis(imidazolium) L-Tartrate: A Hydrogen-Bonded Displacive-Type Molecular Ferroelectric Material

2012 ◽  
Vol 51 (16) ◽  
pp. 3871-3876 ◽  
Author(s):  
Zhihua Sun ◽  
Tianliang Chen ◽  
Junhua Luo ◽  
Maochun Hong
2012 ◽  
Vol 124 (16) ◽  
pp. 3937-3942 ◽  
Author(s):  
Zhihua Sun ◽  
Tianliang Chen ◽  
Junhua Luo ◽  
Maochun Hong

Author(s):  
Jack Binns ◽  
Garry J McIntyre ◽  
Simon Parsons

The pressure- and temperature-dependent phase transitions in the ferroelectric material rubidium hydrogen sulfate (RbHSO4) are investigated by a combination of neutron Laue diffraction and high-pressure X-ray diffraction. The observation of disordered O-atom positions in the hydrogen sulfate anions is in agreement with previous spectroscopic measurements in the literature. Contrary to the mechanism observed in other hydrogen-bonded ferroelectric materials, H-atom positions are well defined and ordered in the paraelectric phase. Under applied pressure RbHSO4undergoes a ferroelectric transition before transforming to a third, high-pressure phase. The symmetry of this phase is revised to the centrosymmetric space groupP21/c, resulting in the suppression of ferroelectricity at high pressure.


2014 ◽  
Vol 15 (1) ◽  
pp. 457-464 ◽  
Author(s):  
Yuanyuan Tang ◽  
Zhihua Sun ◽  
Chengmin Ji ◽  
Lina Li ◽  
Shuquan Zhang ◽  
...  

Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.


2001 ◽  
Vol 123 (7) ◽  
pp. 1545-1546
Author(s):  
James S. Nowick ◽  
De Michael Chung ◽  
Kalyani Maitra ◽  
Santanu Maitra ◽  
Kimberly D. Stigers ◽  
...  

1969 ◽  
Vol 67 (1_3) ◽  
pp. 168-168
Author(s):  
H. G. Hertz

Author(s):  
Krisztina Sebők-Nagy ◽  
László Biczók ◽  
Akimitsu Morimoto ◽  
Tetsuya Shimada ◽  
Haruo Inoue

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