Visible-Light-Induced Selective CO2Reduction Utilizing a Ruthenium Complex Electrocatalyst Linked to a p-Type Nitrogen-Doped Ta2O5Semiconductor

2010 ◽  
Vol 49 (30) ◽  
pp. 5101-5105 ◽  
Author(s):  
Shunsuke Sato ◽  
Takeshi Morikawa ◽  
Shu Saeki ◽  
Tsutomu Kajino ◽  
Tomoyoshi Motohiro
2010 ◽  
Vol 122 (30) ◽  
pp. 5227-5231 ◽  
Author(s):  
Shunsuke Sato ◽  
Takeshi Morikawa ◽  
Shu Saeki ◽  
Tsutomu Kajino ◽  
Tomoyoshi Motohiro

2010 ◽  
Vol 46 (37) ◽  
pp. 6944 ◽  
Author(s):  
Takeo Arai ◽  
Shunsuke Sato ◽  
Keiko Uemura ◽  
Takeshi Morikawa ◽  
Tsutomu Kajino ◽  
...  

Author(s):  
Jacob Schneidewind ◽  
Miguel A. Argüello Cordero ◽  
Henrik Junge ◽  
Stefan Lochbrunner ◽  
Matthias Beller

A new mechanism for light-driven water splitting is described, which decreases the reaction's complexity and offers a new way to extend the range of usable wavelengths far into the visible region.


Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 988
Author(s):  
Chrysa Aivalioti ◽  
Alexandros Papadakis ◽  
Emmanouil Manidakis ◽  
Maria Kayambaki ◽  
Maria Androulidaki ◽  
...  

Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.


2011 ◽  
Vol 509 (21) ◽  
pp. 6252-6256 ◽  
Author(s):  
Xiukai Li ◽  
Huiqi Pan ◽  
Qingsong Hu ◽  
Chi Zhang

2013 ◽  
Vol 1 (1) ◽  
pp. 1300018 ◽  
Author(s):  
Brundabana Naik ◽  
Sun Mi Kim ◽  
Chan Ho Jung ◽  
Song Yi Moon ◽  
Sang Hoon Kim ◽  
...  
Keyword(s):  

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