scholarly journals Synthesis of Honeycomb‐Structured Beryllium Oxide via Graphene Liquid Cells

2020 ◽  
Vol 132 (36) ◽  
pp. 15864-15870
Author(s):  
Lifen Wang ◽  
Lei Liu ◽  
Ji Chen ◽  
Ali Mohsin ◽  
Jung Hwan Yum ◽  
...  
Keyword(s):  
Beryllium Oxide

The intrinsic x-ray energy dependence of beryllium oxide (BeO) ceramic dosimeters

2021 ◽  
Vol 141 ◽  
pp. 106537
Author(s):  
Aiden Chrisanthakopoulos ◽  
Alexandre M.C. Santos
Keyword(s):  
Energy Dependence ◽  
Beryllium Oxide ◽  
X Ray

ChemInform Abstract: Preparation and Catalytic Properties of Gold Finely Dispersed on Beryllium Oxide.

ChemInform ◽  
1988 ◽  
Vol 19 (20) ◽  
Author(s):  
M. HARUTA ◽  
K. SAIKA ◽  
T. KOBAYASHI ◽  
S. TSUBOTA ◽  
Y. NAKAHARA
Keyword(s):  
Catalytic Properties ◽  
Beryllium Oxide

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

Thermoluminescence and low-temperature luminescence of beryllium oxide

2016 ◽  
Vol 90 ◽  
pp. 14-17 ◽  
Author(s):  
M.D. Petrenko ◽  
I.N. Ogorodnikov ◽  
V. Yu. Ivanov
Keyword(s):  
Low Temperature ◽  
Beryllium Oxide

Spectral luminescence properties of zinc-activated beryllium oxide crystals

1991 ◽  
Vol 54 (4) ◽  
pp. 376-381 ◽  
Author(s):  
I. N. Ogorodnikov ◽  
V. Yu. Ivanov ◽  
A. V. Kruzhalov
Keyword(s):  
Beryllium Oxide ◽  
Luminescence Properties ◽  
Oxide Crystals ◽  
Spectral Luminescence
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