CF 2 ‐Functionalized Trifluoromethylated Fullerene C 70 (CF 3 ) 8 (CF 2 ): Structure, Electronic Properties, and Spontaneous Oxidation at the Bridgehead Carbon Atoms

2019 ◽  
Vol 8 (10) ◽  
pp. 1924-1932 ◽  
Author(s):  
Natalia S. Lukonina ◽  
Olesya O. Semivrazhskaya ◽  
Marina G. Apenova ◽  
Nikita M. Belov ◽  
Sergey I. Troyanov ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Spontaneous Oxidation

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties

The electronic properties of a radical cation salt of bis-ethylenedioxodibenzofuran, [(bEDODBF)5 (AsF6)2(CH2Cl 2)0.2]

1988 ◽  
Vol 49 (4) ◽  
pp. 667-673 ◽  
Author(s):  
S. Söderholm ◽  
J. Hellberg ◽  
G. Ahlgren ◽  
M. Krebs ◽  
J.U. von Schütz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cation ◽  
Radical Cation Salt

Electronic properties of TTF-TCNQ : a connection between theory and experiment

1978 ◽  
Vol 39 (12) ◽  
pp. 1355-1363 ◽  
Author(s):  
L.G. Caron ◽  
M. Miljak ◽  
D. Jerome
Keyword(s):  
Electronic Properties ◽  
Theory And Experiment

ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-63-C4-66 ◽  
Author(s):  
S. BENGTSSON ◽  
O. ENGSTRÖM
Keyword(s):  
Electronic Properties

Effect of Chemical and Radiochemical Impurities from Eluants on 99mTc-Labeling Efficiency

1977 ◽  
Vol 16 (06) ◽  
pp. 241-246
Author(s):  
W. Earl Barnes ◽  
L. G. Colombetti
Keyword(s):  
Large Concentration ◽  
Complete Reduction ◽  
99Mtc Labeling ◽  
Spontaneous Oxidation

SummaryOccasionally, radiopharmaceuticals prepared from the eluates of 99Mo-99m T c generators that have not been eluted for several days contain large amounts of free pertechnetate, as tested by radiochromatography and biologically by administration to patients. We find the most probable causes of poor 99mTc-labeling in these cases to be:a) the presence of a large concentration of 99TcO4 – in eluants;b) insufficient stannous ions available for the complete reduction of Tc due to spontaneous oxidation of Sn in the vial and also due to oxidation of stannous ions by the presence of larger than expected concentrations of H2O2 and HO2 radicals in the eluant.

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