Synthetic Routes to Thiol-Functionalized Organic Semiconductors for Molecular and Organic Electronics

2016 ◽  
Vol 6 (2) ◽  
pp. 120-138 ◽  
Author(s):  
Alessandra Operamolla ◽  
Angela Punzi ◽  
Gianluca M. Farinola
Author(s):  
Jenna L Sartucci ◽  
Arindam Maity ◽  
Manikandan Mohanan ◽  
Jeffery A. Bertke ◽  
Miklos Kertesz ◽  
...  

Understanding the doping mechanism in organic semiconductors and generating molecular design rules to control the doping process is crucial to improve the performance of organic electronics. Even though controlling the...


2019 ◽  
Vol 31 (43) ◽  
pp. 1970308
Author(s):  
Hirohiko Fukagawa ◽  
Munehiro Hasegawa ◽  
Katsuyuki Morii ◽  
Kazuma Suzuki ◽  
Tsubasa Sasaki ◽  
...  

2020 ◽  
Vol 117 (34) ◽  
pp. 20397-20403
Author(s):  
Dong Meng ◽  
Jonathan Lee Yang ◽  
Chengyi Xiao ◽  
Rui Wang ◽  
Xiaofei Xing ◽  
...  

Organic frameworks (OFs) offer a novel strategy for assembling organic semiconductors into robust networks that facilitate transport, especially the covalent organic frameworks (COFs). However, poor electrical conductivity through covalent bonds and insolubility of COFs limit their practical applications in organic electronics. It is known that the two-dimensional intralayer π∙∙∙π transfer dominates transport in organic semiconductors. However, because of extremely labile inherent features of noncovalent π∙∙∙π interaction, direct construction of robust frameworks via noncovalent π∙∙∙π interaction is a difficult task. Toward this goal, we report a robust noncovalent π∙∙∙π interaction-stacked organic framework, namely πOF, consisting of a permanent three-dimensional porous structure that is held together by pure intralayer noncovalent π∙∙∙π interactions. The elaborate porous structure, with a 1.69-nm supramaximal micropore, is composed of fully conjugated rigid aromatic tetragonal-disphenoid-shaped molecules with four identical platforms. πOF shows excellent thermostability and high recyclability and exhibits self-healing properties by which the parent porosity is recovered upon solvent annealing at room temperature. Taking advantage of the long-range π∙∙∙π interaction, we demonstrate remarkable transport properties of πOF in an organic-field-effect transistor, and the mobility displays relative superiority over the traditional COFs. These promising results position πOF in a direction toward porous and yet conductive materials for high-performance organic electronics.


2010 ◽  
Vol 22 (34) ◽  
pp. 3876-3892 ◽  
Author(s):  
John E. Anthony ◽  
Antonio Facchetti ◽  
Martin Heeney ◽  
Seth R. Marder ◽  
Xiaowei Zhan

2003 ◽  
Vol 769 ◽  
Author(s):  
Antonio Facchetti ◽  
Myung-Han Yoon ◽  
Howard E. Katz ◽  
Melissa Mushrush ◽  
Tobin J. Marks

AbstractOrganic semiconductors exhibiting complementary-type carrier mobility are the key components for the development of the field of “plastic electronics”. We present here a novel series of αω- and isomerically pure β,β'-diperfluorohexyl-substituted thiophene and study the impact of fluoroalkyl substitution and conjugation length vìs-à-vìs the corresponding fluorinefree analogues. Trends between the fluorinated and fluorine-free families in molecular packing, HOMO-LUMO gap, and π-π interactions are found to be strikingly similar. TFT measurements indicate that all members of the fluorinated series are n-type semiconductors


2003 ◽  
Vol 771 ◽  
Author(s):  
Antonio Facchetti ◽  
Myung-Han Yoon ◽  
Howard E. Katz ◽  
Melissa Mushrush ◽  
Tobin J. Marks

AbstractOrganic semiconductors exhibiting complementary-type carrier mobility are the key components for the development of the field of “gplastic electronics” We present here a novel series of α,ω- and isomerically pure ββ'-diperfluorohexyl-substituted thiophene and study the impact of fluoroalkyl substitution and conjugation length vis-a-vis the corresponding fluorinefree analogues. Trends between the fluorinated and fluorine-free families in molecular packing, HOMO-LUMO gap, and π-π interactions are found to be strikingly similar. TFT measurements indicate that all members of the fluorinated series are n-type semiconductors


2021 ◽  
Vol 7 (25) ◽  
pp. eabg0659
Author(s):  
Renzhong Chen ◽  
Xuejun Wang ◽  
Xin Li ◽  
Hongxiang Wang ◽  
Mingqian He ◽  
...  

Owing to high resolution, reliability, and industrial compatibility, all-photolithography is a promising strategy for industrial manufacture of organic electronics. However, it receives limited success due to the absence of a semiconducting photoresist with high patterning resolution, mobility, and performance stability against photolithography solution processes. Here, we develop a comprehensive semiconducting photoresist with nano-interpenetrating structure. After photolithography, nanostructured cross-linking networks interpenetrate with continuous phases of semiconducting polymers, enabling submicrometer patterning accuracy and compact molecular stacking with high thermodynamic stability. The mobility reaches the highest values of photocrosslinkable organic semiconductors and maintains almost 100% after soaking in developer and stripper for 1000 min. Owing to the comprehensive performance, all-photolithography is achieved, which fabricates organic inverters and high-density transistor arrays with densities up to 1.1 × 105 units cm−2 and 1 to 4 orders larger than conventional printing processes, opening up a new approach toward manufacturing highly integrated organic circuits and systems.


Molecules ◽  
2021 ◽  
Vol 26 (20) ◽  
pp. 6130
Author(s):  
Fei Liu ◽  
Xueling Hou ◽  
Ben-Lin Hu ◽  
Run-Wei Li

Elastic semiconductors are becoming more and more important to the development of flexible wearable electronic devices, which can be prepared by structural engineering design, blending, and the intrinsic elastification of organic semiconductors (intrinsically elastic organic semiconductor, IEOS). Compared with the elastic semiconductors prepared by structural engineering and blending, the IEOS prepared by organic synthesis has attracted numerous attentions for its solution processability and highly tunable chemical structures. For IEOSs, reasonable designs of synthetic routes and methods are the basis for realizing good mechanical and electrical properties. This brief review begins with a concise introduction of elastic semiconductors, then follows with several synthetic methods of IEOSs, and concludes the characteristics of each method, which provides guidance for the synthesis of IEOSs in the future. Furthermore, the properties of IEOSs are involved from the aspects of electrical, mechanical properties, and the applications of the IEOSs in elastic electronic devices. Finally, the challenge and an outlook which IEOSs are facing are presented in conclusion.


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