Triangulating School Climate: Areas of Convergence and Divergence Across Multiple Levels and Perspectives

2019 ◽  
Vol 65 (3-4) ◽  
pp. 423-436 ◽  
Author(s):  
Jessika H. Bottiani ◽  
Sarah Lindstrom Johnson ◽  
Heather L. McDaniel ◽  
Catherine P. Bradshaw
2016 ◽  
Vol 44 (2) ◽  
pp. 166-181 ◽  
Author(s):  
Holly L. Karakos ◽  
Adam Voight ◽  
Joanna D. Geller ◽  
Carol T. Nixon ◽  
Maury Nation

Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.


2008 ◽  
Author(s):  
Aisha Thompson ◽  
Talisha Lee ◽  
Dewey G. Cornell

Author(s):  
Sharmila Bandyopadhyay ◽  
Dewey G. Cornell ◽  
Timothy R. Konold

2011 ◽  
Author(s):  
Carly S. Bruck ◽  
Rita Williams ◽  
Tripp Welch ◽  
Phil Warden ◽  
Patrick K. Hyland

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