scholarly journals Solar Cells: Nanoimaging of Open-Circuit Voltage in Photovoltaic Devices (Adv. Energy Mater. 23/2015)

2015 ◽  
Vol 5 (23) ◽  
Author(s):  
Elizabeth M. Tennyson ◽  
Joseph L. Garrett ◽  
Jesse A. Frantz ◽  
Jason D. Myers ◽  
Robel Y. Bekele ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Energy Mater

scholarly journals Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

2022 ◽  
Author(s):  
H. Bitam ◽  
B. Hadjoudja ◽  
Beddiaf Zaidi ◽  
C. Shakher ◽  
S. Gagui ◽  
...  
Keyword(s):  
Renewable Energy ◽  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Reported Study ◽  
Stated Problem

Due to increased energy intensive human activities resulting accelerated demand for electric power coupled with occurrence of natural disasters with increased frequency, intensity, and duration, it becomes essential to explore and advance renewable energy technology for sustainability of the society. Addressing the stated problem and providing a radical solution has been attempted in this study. To harvest the renewable energy, among variety of solar cells reported, a composite a-Si/CZTS photovoltaic devices has not yet been investigated. The calculated parameters for solar cell based on the new array of layers consisting of a-Si/CZTS are reported in this study. The variation of i) solar cell efficiency as a function of CZTS layer thickness, temperature, acceptor, and donor defect concentration; ii) variation of the open circuit current density as a function of temperature, open circuit voltage; iii) variation of open circuit voltage as a function of the thickness of the CZTS layer has been determined. There has been no reported study on a-Si/CZTS configuration-based solar cell, analysis of the parameters, and study to address the challenges imped efficiency of the photovoltaic device and the same has been discussed in this work. The value of the SnO2/a-Si/CZTS solar cells obtained from the simulation is 23.9 %.

scholarly journals Quantum‐Dot Solar Cells: Suppressing Interfacial Dipoles to Minimize Open‐Circuit Voltage Loss in Quantum Dot Photovoltaics (Adv. Energy Mater. 48/2019)

2019 ◽  
Vol 9 (48) ◽  
pp. 1970188
Author(s):  
Hunhee Lim ◽  
Donghun Kim ◽  
Min‐Jae Choi ◽  
Edward H. Sargent ◽  
Yeon Sik Jung ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Loss ◽  
Quantum Dot Solar Cells ◽  
Energy Mater

scholarly journals Perovskite Solar Cells: Record Open‐Circuit Voltage Wide‐Bandgap Perovskite Solar Cells Utilizing 2D/3D Perovskite Heterostructure (Adv. Energy Mater. 21/2019)

2019 ◽  
Vol 9 (21) ◽  
pp. 1970079 ◽  
Author(s):  
Saba Gharibzadeh ◽  
Bahram Abdollahi Nejand ◽  
Marius Jakoby ◽  
Tobias Abzieher ◽  
Dirk Hauschild ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Energy Mater

Efficient photovoltaic devices based on p-ZnSe/n-CdS core–shell heterojunctions with high open-circuit voltage

2017 ◽  
Vol 5 (8) ◽  
pp. 2107-2113 ◽  
Author(s):  
Xiwei Zhang ◽  
Jie Mao ◽  
Zhibin Shao ◽  
Senlin Diao ◽  
Dan Hu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Core Shell ◽  
Photovoltaic Devices ◽  
Heterojunction Solar Cells ◽  
Znse Nanowires ◽  
Cds Films

Large band-gap ZnSe nanowires and CdS films are used to construct core–shell heterojunction solar cells with high open circuit voltage and efficiency.

scholarly journals Organic Solar Cells: Molecular Understanding of the Open-Circuit Voltage of Polymer:Fullerene Solar Cells (Adv. Energy Mater. 2/2012)

2012 ◽  
Vol 2 (2) ◽  
pp. 173-173
Author(s):  
Shunsuke Yamamoto ◽  
Akiko Orimo ◽  
Hideo Ohkita ◽  
Hiroaki Benten ◽  
Shinzaburo Ito
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Energy Mater

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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