Donor-Acceptor Interfacial Interactions Dominate Device Performance in Hybrid P3HT-ZnO Nanowire-Array Solar Cells

2014 ◽  
Vol 4 (16) ◽  
pp. 1400585 ◽  
Author(s):  
Luisa Whittaker-Brooks ◽  
William E. McClain ◽  
Jeffrey Schwartz ◽  
Yueh-Lin Loo
2012 ◽  
Vol 2012 ◽  
pp. 1-8
Author(s):  
John W. Murphy ◽  
Israel Mejia ◽  
Bruce E. Gnade ◽  
Manuel A. Quevedo-Lopez

We prepare ZnO:poly(3-hexylthiophene) (P3HT) thin-film solar cells and ZnO nanowire:P3HT nanostructured solar cells and evaluate the effect of adding an interfacial layer between the ZnO and P3HT as a function of the nanowire height. We evaluate several different interlayers of CdS deposited, using two different chemical bath deposition (CBD) recipes. The height of the nanowire array is varied from a bilayer device with no nanowires up to arrays with a height of 2 μm. We find that achieving a conformal coating of the ZnO with the interfacial layer is critical to improve device performance and that CBD can be used to grow conformal films on nonuniform surfaces.


2007 ◽  
Vol 7 (12) ◽  
pp. 2467-2471 ◽  
Author(s):  
Yanfeng Gao ◽  
Masayuki Nagai ◽  
Tien-Chih Chang ◽  
Jing-Jong Shyue

2017 ◽  
Vol 1 (5) ◽  
pp. 852-858 ◽  
Author(s):  
Xiaojing Long ◽  
Zicheng Ding ◽  
Chuandong Dou ◽  
Jun Liu ◽  
Lixiang Wang

All-polymer solar cells with P3HT as an electron donor exhibit good device performance with high donor : acceptor blend ratios (w : w, from 0.5 : 1 to 9 : 1).


2012 ◽  
Vol 70 ◽  
pp. 177-180 ◽  
Author(s):  
Zi Qin ◽  
Yunhua Huang ◽  
Qingliang Liao ◽  
Zheng Zhang ◽  
Xiaohui Zhang ◽  
...  

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Kazuhiro Nakabayashi ◽  
Hideharu Mori

All-polymer solar cells are fabricated by using poly(3-hexylthiophene) (P3HT) and fully conjugated donor-acceptor (D-A) block copolymer (P3HT-PNBI-P3HT) as donor and acceptor materials, respectively. Atomic force microscopy (AFM) and grazing incidence wide angle X-ray scattering (GIWAXS) analyses reveal that device performance strongly depends on the P3HT:P3HT-PNBI-P3HT thin film morphology. Indeed, theπ-πstacking nanomorphology rich in the edge-on orientation is formed in the P3HT:P3HT-PNBI-P3HT thin film by optimizing the fabrication conditions, for example, thermal annealing temperature and cast solvent. Consequently, the power conversion efficiency (PCE) of 1.60% is achieved with an open-circuit voltage (Voc) of 0.59 V, short-current (Jsc) of 4.43 mA/cm2, and fill factor (FF) of 0.61. These results suggest that P3HT-PNBI-P3HT has the huge potential for the usage as a nonfullerene acceptor material.


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