Electrochemical Reaction of Lithium with Nanostructured Silicon Anodes: A Study by In-Situ Synchrotron X-Ray Diffraction and Electron Energy-Loss Spectroscopy

2013 ◽  
Vol 3 (10) ◽  
pp. 1324-1331 ◽  
Author(s):  
Feng Wang ◽  
Lijun Wu ◽  
Baris Key ◽  
Xiao-Qing Yang ◽  
Clare P. Grey ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Electrochemical Reaction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Anodes ◽  
Nanostructured Silicon ◽  
Electron Energy Loss

Annealing-induced lattice recovery in room-temperature xenon irradiated CeO2: X-ray diffraction and electron energy loss spectroscopy experiments

2015 ◽  
Vol 30 (9) ◽  
pp. 1555-1562 ◽  
Author(s):  
Janne Pakarinen ◽  
Lingfeng He ◽  
Abdel-Rahman Hassan ◽  
Yongqiang Wang ◽  
Mahima Gupta ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Image Position ◽  
Electron Energy Loss

Abstract

Electron Microscopy and Electron Energy-Loss Spectroscopy Study of Nd1−xSrxCoO3−δ (0≤x≤1) System

2014 ◽  
Vol 20 (3) ◽  
pp. 687-691 ◽  
Author(s):  
Khalid Boulahya ◽  
Manar Hassan ◽  
Jesús C.G. Minguez ◽  
Stavros Nicolopoulos
Keyword(s):  
Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Lattice Parameter ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Simple Cubic ◽  
Electron Energy Loss

AbstractA solid solution of Nd1−xSrxCoO3−δ (with x=0, 1/3, 2/3, and 1) has been prepared and characterized by a combination of X-ray diffraction, electron microscopy, and electron energy-loss spectroscopy (EELS). The structural characterization indicates that Nd-doped materials present an orthorhombic symmetry with a=√2xap, b=√2xap, and c=2xap (ap refers to lattice parameter of simple cubic perovskite), while SrCoO2.5 has an orthorhombic symmetry with a=√2xap, b=4xap, and c=√2xap. EELS analysis revealed that Co are in 3+ oxidation states but in different spin configurations.

Signal/Noise Ratio and Elemental Detectivity by Eels

1982 ◽  
Vol 40 ◽  
pp. 488-489
Author(s):  
R. F. Egerton
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Elemental Analysis ◽  
Electron Energy Loss Spectroscopy ◽  
Emission Spectroscopy ◽  
X Ray ◽  
Signal Noise ◽  
Characteristic Signal ◽  
Noise Ratio ◽  
Electron Energy Loss

An important parameter governing the sensitivity and accuracy of elemental analysis by electron energy-loss spectroscopy (EELS) or by X-ray emission spectroscopy is the signal/noise ratio of the characteristic signal.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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