A p-Type Quantum Dot/Organic Donor:Acceptor Solar-Cell Structure for Extended Spectral Response

2011 ◽  
Vol 1 (4) ◽  
pp. 528-533 ◽  
Author(s):  
Hsiang-Yu Chen ◽  
Jianhui Hou ◽  
Smita Dayal ◽  
Lijun Huo ◽  
Nikos Kopidakis ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Spectral Response ◽  
Cell Structure ◽  
Solar Cell Structure ◽  
P Type

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Carrier Concentration ◽  
Density Of States ◽  
Active Layer ◽  
Cell Structure ◽  
Indium Nitride ◽  
Effective Density ◽  
Intrinsic Carrier Concentration ◽  
Solar Cell Structure

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

Structural and Optical Properties of a-Si:H/μc-Si:H:B Junctions in the a-Si:H-Based n-i-P Solar Cell Configuration

1997 ◽  
Vol 467 ◽  
Author(s):  
Joohyun Kohi ◽  
H. Fujiwara ◽  
C. R. Wronski ◽  
R. W. Collins
Keyword(s):  
Optical Properties ◽  
Solar Cell ◽  
Single Phase ◽  
Cell Structure ◽  
Chemical Vapor ◽  
Average Crystallite Size ◽  
Microcrystalline Silicon ◽  
Solar Cell Structure ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe have extended previous real time spectroscopie ellipsometry (RTSE) capabilities in order to investigate the effects of H2-plasma treatment of i-type hydrogenated amorphous silicon (a-Si:H) on the deposition of the overlying p-type microcrystalline silicon (μc-Si:H:B)) in the formation of an n-i-p solar cell structure. In this study, we compare in detail the nucleation and growth of p-layers by plasma-enhanced chemical vapor deposition (PECVD) from SiH4 highly diluted in H2 on the surfaces of untreated and H2-plasma treated a-Si:H i-layers. We find that for intended single-phase μc-Si:H:B p-layer PECVD under optimum conditions on an untreated i-layer surface, a wide gap (∼2.0 eV Taue gap) amorphous layer nucleates and grows in the first ∼150 Å. This layer develops uniformly to a bulk thickness of ∼150 Å, but gradually acquires a crystalline structure for thicknesses greater than the desired p-layer thickness (200 Å). In contrast, for p-layer PECVD under identical conditions on the H2-plasma treated i-layer, high-density crystalline nuclei form immediately. This conclusion is drawn on the basis of the unique optical properties of the bulk p-layer that develops on the surface of the H2-plasma treated i-layer. Specifically, an absorption onset near ∼2.5 eV is observed for a 48 Å fully-coalesced p-layer, as measured by RTSE at 200°C. For this μc-Si:H:B p-layer, the optical gap decreases by ∼0.15 eV with increasing thickness from 50 to 200 Å. This effect is attributed to a reduction in the quantum confinement energy with an increase in the average crystallite size in the film.

A novel, PbS:Hg quantum dot-sensitized, highly efficient solar cell structure with triple layered TiO2 photoanode

2018 ◽  
Vol 269 ◽  
pp. 172-179 ◽  
Author(s):  
M.A.K.L. Dissanayake ◽  
T. Jaseetharan ◽  
G.K.R. Senadeera ◽  
C.A. Thotawatthage
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Cell Structure ◽  
Highly Efficient ◽  
Solar Cell Structure ◽  
Efficient Solar Cell ◽  
Tio2 Photoanode

GaAs Based InAs/InGaAs Quantum Dots-in-a-Well Solar Cells and Their Concentration Applications

2009 ◽  
Vol 1211 ◽  
Author(s):  
Kai Yang ◽  
Mohamed A El-Emawy ◽  
Tingyi Gu ◽  
Andreas Stintz ◽  
Luke F Lester
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Carrier Transport ◽  
Spectral Response ◽  
Cell Structure ◽  
Short Circuit ◽  
Control Cell ◽  
Photon Absorption

AbstractQuantum dot (QD) solar cells have been actively investigated recently since they have been theoretically shown to have the potential to realize high conversion efficiencies. However, very little research has analyzed the effect the dots have on the transport or recombination effects in the device. In this paper, we report the I-V and spectral response characteristics of InAs/InGaAs “dots-in-a-well” (DWELL) solar cells and compared them with GaAs control cells. The QD cells show higher short circuit density (Jsc) and better long-wavelength efficiency compared to the control cell. By comparing the dark current behavior of the QD cells to the GaAs control cells, we have conservatively estimated the concentration level at which the QD solar cells would surpass GaAs control devices.The quantum dot solar cells are grown by molecular beam epitaxy using the DWELL technique and a standard pin structure. The control cell structure is similar to the QD one except that there are no InAs dots or surrounding InGaAs quantum wells. The light I-V characteristics were measured under AM1.5G at 100 mW/cm2 illumination. The control cell has a Voc of 0.89V and a Jsc of 9.1 mA/cm2. The InAs QD solar cell has a Voc of 0.68 V and a Jsc of 12.2 mA/cm2. The QD cell has about a 33% larger short circuit current density compared to the GaAs control cell, which is mainly due to the higher photon absorption rate related to the DWELL structure. The spectrum response data show that the GaAs control cell and the QD cell have similar external quantum efficiency (EQE) in the visible to near-IR range (400-870nm). Beyond the GaAs absorption edge (870nm), the QD solar cell shows extended response with much higher measured EQE up to ˜1200 nm. This is strong evidence of the contribution from the InAs QDs and InGaAs QWs, the latter being the primary contributor to the increased Jsc.We calculated the “local” ideality factor from measured dark IV data, and then substituted it into a single diode equation to get the “local” reverse saturation current. Whereas the GaAs control shows the typical monotonically decreasing ideality from 0.3 to 0.8V, a linearly increasing ideality is observed in the QD cell. Based on the measured dark currents, and neglecting series resistance, we extrapolated the IV curves to higher voltages and found that they intercept at ˜2×104 mA/cm2. Dividing the intercept point Jdark by the Jsc of the QD cell conservatively estimates the light concentration (˜1400×) above which the QD cell would have a higher Voc than the GaAs cell assuming additivity applies. This result is mainly attributed to the unique carrier transport properties that are introduced into the solar cell devices that utilize QDs.

A novel, PbS quantum dot-Sensitized solar cell structure with TiO2-fMWCNTS nano-composite filled meso-porous anatase TiO2 photoanode

Solar Energy ◽  
2020 ◽  
Vol 204 ◽  
pp. 617-623
Author(s):  
Hamid Latif ◽  
Saima Ashraf ◽  
M. Shahid Rafique ◽  
Ayesha Imtiaz ◽  
Abdul Sattar ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Cell Structure ◽  
Anatase Tio2 ◽  
Nano Composite ◽  
Solar Cell Structure ◽  
Tio2 Photoanode ◽  
Pbs Quantum Dot
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