scholarly journals Organic RAM: Study of Electronic and Steric Effects of Different Substituents in Donor–Acceptor Molecules on Multilevel Organic Memory Data Storage Performance (Adv. Electron. Mater. 4/2021)

2021 ◽  
Vol 7 (4) ◽  
pp. 2170010
Author(s):  
Jinba Han ◽  
Hong Lian ◽  
Xiaozhe Cheng ◽  
Qingchen Dong ◽  
Yongquan Qu ◽  
...  
1986 ◽  
Vol 64 (8) ◽  
pp. 1491-1495 ◽  
Author(s):  
Jorge D. Anunziata ◽  
Norma S. Galaverna ◽  
Joaquín O. Singh ◽  
Juana J. Silber

The interaction of several aliphatic amines as n-donors with 1,2-, 1,3-, and 1,4-dicyanobenzenes as π acceptors in n-hexane has been studied. The spectroscopic behaviour of the mixtures leads us to propose that Electron Donor – Acceptor (EDA) complexes are formed. Correlations of the experimental data with the amine structure were performed for the amine–1,4-dicyanobenzene complexes. By means of free energy related substituents and regression analysis, the electronic and steric effects of three N-substituents were quantitatively separated. Thus, with K representing the stability constants of the complexes, the values of log K are correlated with Taft's polar substituent constants, σ*, and Hancock's corrected steric substituent constants, [Formula: see text] The results allowed the proposal of a probable structure of the complex, at least with respect to the donor orientation.


Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.


Tetrahedron ◽  
2014 ◽  
Vol 70 (3) ◽  
pp. 643-649 ◽  
Author(s):  
Xiaowei Sun ◽  
Chengzhe Gao ◽  
Fan Zhang ◽  
Zhuang Song ◽  
Lingyi Kong ◽  
...  

1972 ◽  
Vol 50 (4) ◽  
pp. 562-566 ◽  
Author(s):  
L. K. Peterson ◽  
K. I. Thé

Boron trimethyl reacts with each of the organometalloid-hydrazine derivatives Me2NN(R)GeMe3 (R = H, Me, SiMe3) except Me2NN(SiMe3)GeMe3, and with Me2NNHSiMe3, forming 1:1 adducts. With Me2NN(SiMe3)GeMe3 and BMe3, no adduct was formed even at low temperatures. On the basis of p.m.r. spectra, the metalloid-substituted nitrogen atom rather than the terminal nitrogen, is indicated as the basic center at which adduct formation occurs. With BF3, the Si—N and Ge—N bonds of the hydrazine derivatives were cleaved, again indicating attack at the central nitrogen atom. In a series of experiments involving CY2 (Y = O, S) and Me2NN(R)MMe3 (R = H, Me, SiMe3; M = Si, Ge), reaction occurred readily for R = H, but less readily for R = Me and for the compound Me2NN(GeMe3)2, while no reaction was observed for the compounds Me2NN(SiMe3)2 and Me2NN(SiMe3)GeMe3, even when heat or basic catalysts were employed. Reaction products, carbamate and thiocarbamate derivatives, Me2NN(R)C(Y)YMMe3, were characterized on the basis molecular weight, i.r., p.m.r., and mass spectroscopy, and m.p. data. Ease of formation is discussed in terms of electronic and steric effects.


2000 ◽  
Vol 65 (18) ◽  
pp. 5868-5870 ◽  
Author(s):  
Oscar Belda ◽  
Nils-Fredrik Kaiser ◽  
Ulf Bremberg ◽  
Mats Larhed ◽  
Anders Hallberg ◽  
...  

2021 ◽  
pp. 2002615
Author(s):  
Linfeng Cui ◽  
Yanjun Gong ◽  
Chuanqin Cheng ◽  
Yongxian Guo ◽  
Wei Xiong ◽  
...  

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