Regulate the Electron Mobility and Threshold Voltage of P(NDI2OD‐T2)‐Based Organic Field‐Effect Transistors by the Compatibility Principle

2021 ◽  
Vol 7 (2) ◽  
pp. 2000939
Author(s):  
Hau‐Ren Yang ◽  
Yu‐Ying Lai
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Compatibility Principle

Organic Field-Effect Transistors with a Low Pinch-Off Voltage and a Controllable Threshold Voltage

2008 ◽  
Vol 20 (3) ◽  
pp. 611-615 ◽  
Author(s):  
Y. Wang ◽  
Y. Q. Liu ◽  
Y. B. Song ◽  
S. H. Ye ◽  
W. P. Wu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

2009 ◽  
Vol 21 (16) ◽  
pp. 1573-1576 ◽  
Author(s):  
Claudia Piliego ◽  
Dorota Jarzab ◽  
Giuseppe Gigli ◽  
Zhihua Chen ◽  
Antonio Facchetti ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Electron Mobility

Degradation of organic field-effect transistors made of pentacene

2004 ◽  
Vol 19 (7) ◽  
pp. 1999-2002 ◽  
Author(s):  
Ch. Pannemann ◽  
T. Diekmann ◽  
U. Hilleringmann
Keyword(s):  
Charge Carrier ◽  
Threshold Voltage ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Semiconducting Material

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

scholarly journals Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor

2015 ◽  
Vol 3 (15) ◽  
pp. 3569-3573 ◽  
Author(s):  
Agathe Filatre-Furcate ◽  
Toshiki Higashino ◽  
Dominique Lorcy ◽  
Takehiko Mori
Keyword(s):  
Single Crystal ◽  
Electron Acceptor ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

The single-crystal transistor of the sulfur rich π-electron acceptor has exhibited air-stable electron mobility as high as 0.22 cm2 V−1 s−1.

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