Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al 2 O 3 /ZnO Thin Films for a Field‐Effect Transistor

2020 ◽  
pp. 2000876
Author(s):  
Hyun Jae Lee ◽  
Taehwan Moon ◽  
Seung Dam Hyun ◽  
Sukin Kang ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electron Gas ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
2D Electron Gas ◽  
Effect Transistor

scholarly journals Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Gil Su Jang ◽  
Ki Hwan Seok ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundaries ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ferroelectric Thin Film ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Test Results ◽  
Effect Transistor

Abstract The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

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