Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

2020 ◽  
Vol 6 (10) ◽  
pp. 2000582 ◽  
Author(s):  
Hea‐Lim Park ◽  
Min‐Hoi Kim ◽  
Sin‐Hyung Lee
Keyword(s):  
Conductive Filament ◽  
Polymeric Layer

Conductive Filament Formation in Printed Circuit Boards – Effects of Reflow Conditions and Flame Retardants

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Michael Pecht
Keyword(s):  
Flame Retardants ◽  
Printed Circuit Boards ◽  
Electrochemical Process ◽  
Lead Free ◽  
Circuit Boards ◽  
Filament Formation ◽  
Conductive Filament ◽  
Printed Circuit ◽  
Free Solder ◽  
Halogen Free

Abstract Failures in printed circuit boards account for a significant percentage of field returns in electronic products and systems. Conductive filament formation is an electrochemical process that requires the transport of a metal through or across a nonmetallic medium under the influence of an applied electric field. With the advent of lead-free initiatives, boards are being exposed to higher temperatures during lead-free solder processing. This can weaken the glass-fiber bonding, thus enhancing conductive filament formation. The effect of the inclusion of halogen-free flame retardants on conductive filament formation in printed circuit boards is also not completely understood. Previous studies, along with analysis and examinations conducted on printed circuit boards with failure sites that were due to conductive filament formation, have shown that the conductive path is typically formed along the delaminated fiber glass and epoxy resin interfaces. This paper is a result of a year-long study on the effects of reflow temperatures, halogen-free flame retardants, glass reinforcement weave style, and conductor spacing on times to failure due to conductive filament formation.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

2021 ◽  
pp. 2100605
Author(s):  
Shu‐Chin Tsai ◽  
Hong‐Yang Lo ◽  
Chih‐Yang Huang ◽  
Min‐Ci Wu ◽  
Yi‐Tang Tseng ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Conductive Filament ◽  
And Performance ◽  
Dual Mechanism

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Development of a Conductive Filament for 3D Printing

2021 ◽  
Vol 41 (10) ◽  
pp. 974-976
Author(s):  
V. V. Kuts ◽  
M. S. Razumov ◽  
A. K. Dosumov ◽  
S. A. Chevychelov
Keyword(s):  
3D Printing ◽  
Conductive Filament

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

2021 ◽  
Author(s):  
Kazuto Mizutani ◽  
Takuya HOSHII ◽  
Hitoshi WAKABAYASHI ◽  
Kazuo TSUTSUI ◽  
Edward Yi Chang ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Transformation ◽  
Cerium Oxide ◽  
Remnant Polarization ◽  
Ferroelectric Phase ◽  
Filament Formation ◽  
Conductive Filament ◽  
Phase Stabilization ◽  
Different Temperatures ◽  
Ferroelectric Switching

Abstract The effects of 1-nm-thick CeOx capping on 7.5-nm-thick Y-doped HfO2 films on the ferroelectric characteristics are investigated. From the ferroelectric characteristics of the samples annealed at different temperatures from 450 to 600oC and annealing durations, the time (τ) required to stabilize the ferroelectric phase at each temperature was shortened by the capping. The identical activation energy (Ea) of 2.65 eV for ferroelectric stabilization without and with capping suggests the same kinetics for phase transformation. However, an increase in the remnant polarization (Pr) was obtained. Only a few Ce atoms diffused into the underlying HfO2 film even after 600oC annealing. Ferroelectric switching tests revealed an improvement in endurance from 107 to 1010 by the capping, presumably owing to the suppression of conductive filament formation. Therefore, CeOx capping is effective in promoting the ferroelectric phase in HfO2 with high switching endurance.

The Crystal Structures of Et2Sn(O2PMe2)2 and Ph2Sn(O2PMe2)2; Synthesis and Spectral Studies of Ph2Sn(O2PMe2)2

1997 ◽  
Vol 52 (5) ◽  
pp. 587-592 ◽  
Author(s):  
Abdel-Fattah Shihada ◽  
Frank Weller
Keyword(s):  
Structural Information ◽  
Layer Structure ◽  
Chain Structure ◽  
Spectral Studies ◽  
Monoclinic Space Group ◽  
X Ray Diffraction ◽  
Space Group ◽  
Polymeric Layer ◽  
In Trans ◽  
Ir And Raman

Abstract Ph2Sn(O2PMe2)2 has been synthesized by the reaction of HO2PMe2 with Ph2SnO in toluene or by treating HO2PMe2 with Ph2SnCl2 in methanol. X-ray diffraction studies of Et2Sn(O2PMe2)2 and Ph2Sn(O2PMe2)2 show that the O2PMe2 ligands function as bidentate bridges between the tin atoms. The ethyl and the phenyl groups are in trans-position in the resulting octahedral environment around tin. Et2Sn(O2PMe2)2 crystallizes in the monoclinic space group P21/n (a = 817.11(9), b = 974.1(1), c = 970.1(1) pm, β = 113.749(6)°, Z = 2 and R = 0.032) and con­sists of a polymeric layer structure with centrosymmetric (SnOPO)4 sixteen-membered rings. Ph2Sn(O2PMe2)2 also crystallizes monoclinically in the space group P21/n (a= 1060.9(1), b = 999.4 (1), c = 1768.9(2) pm, β = 90.93(1)°, Z = 4 and R = 0.057) and has a polymeric ring-chain structure with centrosymmetric (SnOPO)2 eight-membered rings. The IR and Raman spectra of Ph2Sn(O2PMe2)2 have been assigned and discussed in the light of structural information. The Sn(O2PMe2)+ ion represents the base peak in the mass spectrum of Ph2Sn(O2Me2)2.

Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices

2017 ◽  
Vol 694 ◽  
pp. 464-470 ◽  
Author(s):  
Bai Sun ◽  
Xin Zhang ◽  
Guangdong Zhou ◽  
Chunming Zhang ◽  
Pingyuan Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conductive Filament ◽  
Resistive Switching Memory ◽  
Cu Ions ◽  
Switching Memory
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