Ultrasensitive Multilayer MoS 2 ‐Based Photodetector with Permanently Grounded Gate Effect

2020 ◽  
Vol 6 (4) ◽  
pp. 1901256
Author(s):  
Muhammad Naqi ◽  
Manasa Kaniselvan ◽  
Sooho Choo ◽  
Gyuchull Han ◽  
Sangjin Kang ◽  
...  
Keyword(s):  
Gate Effect

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

2005 ◽  
Vol 52 (7) ◽  
pp. 1649-1655 ◽  
Author(s):  
S. Schwantes ◽  
T. Florian ◽  
T. Stephan ◽  
M. Graf ◽  
V. Dudek
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices

scholarly journals Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Kun Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectral Characteristics ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Broadband Absorption ◽  
Gate Effect ◽  
Pressure Chemical

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Author(s):  
Stefan Schwantes ◽  
Josef Furthaler ◽  
Bernd Schauwecker ◽  
Franz Dietz ◽  
Michael Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

An Adsorbate Discriminatory Gate Effect in a Flexible Porous Coordination Polymer for Selective Adsorption of CO2 over C2H2

2016 ◽  
Vol 138 (9) ◽  
pp. 3022-3030 ◽  
Author(s):  
Maw Lin Foo ◽  
Ryotaro Matsuda ◽  
Yuh Hijikata ◽  
Rajamani Krishna ◽  
Hiroshi Sato ◽  
...  
Keyword(s):  
Coordination Polymer ◽  
Selective Adsorption ◽  
Gate Effect ◽  
Porous Coordination Polymer ◽  
Adsorption Of Co2

scholarly journals Effect of Electrostatic Interactions on Gate Effect in Molecularly Imprinted Polymers

2004 ◽  
Vol 72 (7) ◽  
pp. 508-510 ◽  
Author(s):  
Koji HATTORI ◽  
Yasuo YOSHIMI ◽  
Toro ITO ◽  
Katsuhiko HLRANO ◽  
Fukashi KOHORI ◽  
...  
Keyword(s):  
Molecularly Imprinted Polymers ◽  
Electrostatic Interactions ◽  
Molecularly Imprinted ◽  
Imprinted Polymers ◽  
Gate Effect

A Controllable Gate Effect in Cobalt(II) Organic Frameworks by Reversible Structure Transformations

2013 ◽  
Vol 52 (44) ◽  
pp. 11550-11553 ◽  
Author(s):  
Qiang Chen ◽  
Ze Chang ◽  
Wei-Chao Song ◽  
Han Song ◽  
Hai-Bin Song ◽  
...  
Keyword(s):  
Gate Effect

Analysis of the Back-Gate Effect on the on-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Vol 6 (3) ◽  
pp. 377-385 ◽  
Author(s):  
S. Schwantes ◽  
J. Furthaler ◽  
B. Schauwecker ◽  
F. Dietz ◽  
M. Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown
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