Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control

2020 ◽  
Vol 6 (4) ◽  
pp. 1901090
Author(s):  
Gerard Joseph Lim ◽  
Daniel Chua ◽  
Weiliang Gan ◽  
Chandrasekhar Murapaka ◽  
Wen Siang Lew
Keyword(s):  
Bias Field ◽  
Spin Orbit ◽  
Logic Device ◽  
Chirality Control

Reconfigurable spin orbit logic device using asymmetric Dzyaloshinskii–Moriya interaction

2020 ◽  
Vol 117 (7) ◽  
pp. 072401
Author(s):  
Yinuo Shi ◽  
Kequn Chi ◽  
Zhou Li ◽  
Wenbiao Zhang ◽  
Yun Xing ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Logic Device ◽  
Moriya Interaction

scholarly journals Spin–orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shinji Isogami ◽  
Yohei Shiokawa ◽  
Atsushi Tsumita ◽  
Eiji Komura ◽  
Yugo Ishitani ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Bias Field ◽  
Film Plane ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Effective Spin ◽  
Current Dependence ◽  
Magnetic Easy Axis ◽  
Long Pulse

AbstractWe have studied current induced magnetization switching in W/CoFeB/MgO based three terminal magnetic tunnel junctions. The switching driven by spin—orbit torque (SOT) is evaluated in the so-called type-Y structure, in which the magnetic easy-axis of the CoFeB layer lies in the film plane and is orthogonal to the current flow. The effective spin Hall angle estimated from the bias field dependence of critical current (Ic) is ~ 0.07. The field and current dependence of the switching probability are studied. The field and DC current induced switching can be described using a model based on thermally assisted magnetization switching. In contrast, the 50 ns long pulse current dependence of the switching probability shows significant deviation from the model, even if contribution from the field-like torque is included. The deviation is particularly evident when the threshold switching current is larger. These results show that conventional thermally assisted magnetization switching model cannot be used to describe SOT induced switching using short current pulses.

scholarly journals Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhenyi Zheng ◽  
Yue Zhang ◽  
Victor Lopez-Dominguez ◽  
Luis Sánchez-Tejerina ◽  
Jiacheng Shi ◽  
...  
Keyword(s):  
Bias Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Plane Symmetry ◽  
Micromagnetic Simulations ◽  
Practical Applications ◽  
Spintronic Devices ◽  
Perpendicular Magnetization ◽  
Inversion Asymmetry

AbstractCurrent-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Crystalline Direction Dependence of Spin Precession Angle and Its Application to Complementary Spin Logic Devices

2015 ◽  
Vol 15 (10) ◽  
pp. 7518-7521
Author(s):  
Youn Ho Park ◽  
Hyung-Jun Kim ◽  
Joonyeon Chang ◽  
Heon-Jin Choi ◽  
Hyun Cheol Koo
Keyword(s):  
Crystal Orientation ◽  
Channel Length ◽  
Orbit Interaction ◽  
Spin Precession ◽  
Spin Orbit ◽  
Logic Device ◽  
Precession Angle ◽  
Direction Dependence ◽  
The Individual ◽  
Channel Spin

In a semiconductor channel, spin-orbit interaction is divided into two terms, Rashba and Dresselhaus effects, which are key phenomena for modulating spin precession angles. The direction of Rashba field is always perpendicular to the wavevector but that of Dresselhaus field depends on the crystal orientation. Based on the individual Rashba and Dresselhaus strengths, we calculate spin precession angles for various crystal orientations in an InAs quantum well structure. When the channel length is 1 μm, the precession angle is 550° for the [110] direction and 460° for the [1–10] direction, respectively. Using the two spin transistors with different crystal directions, which play roles of n- and p-type transistors in conventional charge transistors, we propose a complementary logic device.

Comparison of random field strengths in (1-x)SrTiO3-xBiFeO3 and (1-x)SrTiO3-xBaTiO3 relaxor ferroelectrics by means of acoustic emission

2020 ◽  
Vol 92 (2) ◽  
pp. 20401
Author(s):  
Evgeniy Dul'kin ◽  
Michael Roth
Keyword(s):  
Acoustic Emission ◽  
Random Field ◽  
Electric Fields ◽  
Bias Field ◽  
Relaxor Ferroelectrics ◽  
External Bias ◽  
Field Strengths

In relaxor (1-x)SrTiO3-xBiFeO3 ferroelectrics ceramics (x = 0.2, 0.3 and 0.4) both intermediate temperatures and Burns temperatures were successfully detected and their behavior were investigated in dependence on an external bias field using an acoustic emission. All these temperatures exhibit a non-trivial behavior, i.e. attain the minima at some threshold fields as a bias field enhances. It is established that the threshold fields decrease as x increases in (1-x)SrTiO3-xBiFeO3, as it previously observed in (1-x)SrTiO3-xBaTiO3 (E. Dul'kin, J. Zhai, M. Roth, Phys. Status Solidi B 252, 2079 (2015)). Based on the data of the threshold fields the mechanisms of arising of random electric fields are discussed and their strengths are compared in both these relaxor ferroelectrics.

Transient gain-versus-absorption laser probing of spin-orbit states, kinetics and dynamics

1987 ◽  
Vol 84 ◽  
pp. 385-391
Author(s):  
Smedley John E. ◽  
Hess Wayne P. ◽  
Haugen Harold K. ◽  
R. Leone Stephen
Keyword(s):  
Spin Orbit ◽  
Laser Probing ◽  
Kinetics And Dynamics
Sign in / Sign up

Export Citation Format

Share Document