Bar‐Coated Organic Thin‐Film Transistors with Reliable Electron Mobility Approaching 10 cm 2 V −1 s −1

2019 ◽  
Vol 6 (1) ◽  
pp. 1901002 ◽  
Author(s):  
Junhua Bai ◽  
Yu Jiang ◽  
Zhongli Wang ◽  
Ying Sui ◽  
Yunfeng Deng ◽  
...  
2005 ◽  
Vol 44 (6A) ◽  
pp. 3663-3668 ◽  
Author(s):  
Youji Inoue ◽  
Youichi Sakamoto ◽  
Toshiyasu Suzuki ◽  
Masafumi Kobayashi ◽  
Yuan Gao ◽  
...  

2015 ◽  
Vol 6 (3) ◽  
pp. 418-425 ◽  
Author(s):  
Guobing Zhang ◽  
Jinghua Guo ◽  
Jie Zhang ◽  
Peng Li ◽  
Jingxuan Ma ◽  
...  

A phthalimide- and diketopyrrolopyrrole-based polymer was synthesized and polymer-based OTFTs exhibited an electron mobility as high as 0.52 cm2 V−1 s−1.


2003 ◽  
Vol 15 (15) ◽  
pp. 1278-1282 ◽  
Author(s):  
R.J. Chesterfield ◽  
C.R. Newman ◽  
T.M. Pappenfus ◽  
P.C. Ewbank ◽  
M.H. Haukaas ◽  
...  

2015 ◽  
Vol 3 (31) ◽  
pp. 8219-8224 ◽  
Author(s):  
Wangqiao Chen ◽  
Jing Zhang ◽  
Guankui Long ◽  
Yi Liu ◽  
Qichun Zhang

We demonstrated a dramatic enhancement of the electron mobility of naphthalene diimide in thin film transistors under ambient conditions using a simple step reaction replacing oxygen with sulfur atoms.


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

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