Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels

2019 ◽  
Vol 5 (12) ◽  
pp. 1900730 ◽  
Author(s):  
Sanghyuck Yu ◽  
Yongjae Cho ◽  
June Yeong Lim ◽  
Hyeokjae Kwon ◽  
Yeonsu Jeong ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Transition Metal Dichalcogenide ◽  
Field Effect Devices ◽  
Common Gate

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

2015 ◽  
Vol 44 (21) ◽  
pp. 7715-7736 ◽  
Author(s):  
Hennrik Schmidt ◽  
Francesco Giustiniano ◽  
Goki Eda
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
State Of The Art ◽  
Transition Metal Dichalcogenide ◽  
Surface And Interface ◽  
Field Effect Devices ◽  
Interface Effects

We review the state-of-the-art electronic properties of atomically thin TMD FETs with a focus on surface and interface effects.

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Tuning Transition-Metal Dichalcogenide Field-Effect Transistors by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film

ACS Nano ◽  
2018 ◽  
Vol 12 (10) ◽  
pp. 10123-10129 ◽  
Author(s):  
Hisashi Ichimiya ◽  
Masahiro Takinoue ◽  
Akito Fukui ◽  
Kohei Miura ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Pattern Formation ◽  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenide

Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors

ACS Nano ◽  
2019 ◽  
Vol 14 (1) ◽  
pp. 746-754 ◽  
Author(s):  
Zheng-Dong Luo ◽  
Xue Xia ◽  
Ming-Min Yang ◽  
Neil R. Wilson ◽  
Alexei Gruverman ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Transition Metal Dichalcogenide
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