Balanced Performance Enhancements of a‐InGaZnO Thin Film Transistors by Using All‐Amorphous Dielectric Multilayers Sandwiching High‐k CaCu 3 Ti 4 O 12

2019 ◽  
Vol 5 (10) ◽  
pp. 1900322 ◽  
Author(s):  
Ye Seul Jung ◽  
Chan Su Han ◽  
Bhaskar Chandra Mohanty ◽  
Hong je Choi ◽  
Jin Hyeok Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High K ◽  
Amorphous Dielectric

High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

2011 ◽  
Vol 1315 ◽  
Author(s):  
D. K. Ngwashi ◽  
R. B. M. Cross ◽  
S. Paul ◽  
Andrian P. Milanov ◽  
Anjana Devi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Metrics ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hafnium Dioxide ◽  
Organic Chemical ◽  
Channel Mobility ◽  
High K ◽  
Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

Solution-processed amorphous yttrium aluminium oxide YAlxOy and aluminum oxide AlxOy, and their functional dielectric properties and performance in thin-film transistors

2020 ◽  
Vol 8 (25) ◽  
pp. 8521-8530 ◽  
Author(s):  
Nico Koslowski ◽  
Vanessa Trouillet ◽  
Jörg J. Schneider
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Single Source ◽  
Yttrium Aluminium ◽  
Single Source Precursor ◽  
Deep Uv ◽  
And Performance ◽  
Amorphous Dielectric

Yttrium aluminium oxide (YAlxOy) dielectric is accessible using a molecular single-source precursor approach. Processing using deep UV leads to a functional amorphous dielectric with functionality in a thin-film transistor device.

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