Resistive Switching Effect with ON/OFF Current Relation up to 10 9 in 2D Printed Composite Films of Fluorinated Graphene with V 2 O 5 Nanoparticles

2019 ◽  
Vol 5 (10) ◽  
pp. 1900310
Author(s):  
Artem I. Ivanov ◽  
Anton K. Gutakovskii ◽  
Igor A. Kotin ◽  
Regina A. Soots ◽  
Irina V. Antonova
Keyword(s):  
Resistive Switching ◽  
Composite Films ◽  
Switching Effect ◽  
Fluorinated Graphene ◽  
Resistive Switching Effect

Resistive switching effect and traps in partially fluorinated graphene films

2016 ◽  
Vol 49 (9) ◽  
pp. 095303 ◽  
Author(s):  
Irina I Kurkina ◽  
Irina V Antonova ◽  
Nadezhda A Nebogatikova ◽  
Albert N Kapitonov ◽  
Svetlana A Smagulova
Keyword(s):  
Resistive Switching ◽  
Switching Effect ◽  
Graphene Films ◽  
Fluorinated Graphene ◽  
Resistive Switching Effect

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Multilayer Films ◽  
Text Structure ◽  
Switching Effect ◽  
Access Memory ◽  
Multi Stage ◽  
Switching Phenomenon ◽  
Resistance Random Access Memory ◽  
Resistive Switching Effect

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

scholarly journals Relationship between Resistive Switching Effect and Secondary Electron Yield in Transition Metal Oxide Films

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Secondary Electron ◽  
Oxide Films ◽  
Transition Metal Oxide ◽  
Switching Effect ◽  
Metal Oxide Films ◽  
Secondary Electron Yield ◽  
Resistive Switching Effect

Resistive Switching Effect of the Structure Based on Silicon Nitride

2021 ◽  
Vol 66 (1) ◽  
pp. 133-138
Author(s):  
F. F. Komarov ◽  
I. A. Romanov ◽  
L. A. Vlasukova ◽  
I. N. Parkhomenko ◽  
A. A. Tsivako ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Resistive Switching ◽  
Switching Effect ◽  
Resistive Switching Effect

Resistive switching effect based on graphene-embedded poly(4-vinyl phenol) composite film by spinning coating

2020 ◽  
Vol 31 (21) ◽  
pp. 18605-18613
Author(s):  
Enming Zhao ◽  
Xiaoqi Li ◽  
Xiaodan Liu ◽  
Chen Wang ◽  
Guangyu Liu ◽  
...  
Keyword(s):  
Composite Film ◽  
Resistive Switching ◽  
Switching Effect ◽  
Vinyl Phenol ◽  
Resistive Switching Effect
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