Nonvolatile Electric Control of Exchange Bias by a Redox Transformation of the Ferromagnetic Layer

2019 ◽  
Vol 5 (6) ◽  
pp. 1900296 ◽  
Author(s):  
Jonas Zehner ◽  
Rico Huhnstock ◽  
Steffen Oswald ◽  
Ulrike Wolff ◽  
Ivan Soldatov ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Ferromagnetic Layer ◽  
Redox Transformation ◽  
Electric Control

scholarly journals Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching

2018 ◽  
Vol 30 (30) ◽  
pp. 1801885 ◽  
Author(s):  
Lujun Wei ◽  
Zhenzhong Hu ◽  
Guanxiang Du ◽  
Yuan Yuan ◽  
Ji Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Exchange Bias ◽  
Room Temperature ◽  
Electric Control

scholarly journals Robust isothermal electric control of exchange bias at room temperature

2010 ◽  
Vol 9 (7) ◽  
pp. 579-585 ◽  
Author(s):  
Xi He ◽  
Yi Wang ◽  
Ning Wu ◽  
Anthony N. Caruso ◽  
Elio Vescovo ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Room Temperature ◽  
Electric Control

Exchange Bias and Training Effect in Polycrystalline Antiferromagnetic/Ferromagnetic Bilayers

2002 ◽  
Vol 746 ◽  
Author(s):  
Markus Kirschner ◽  
Dieter Suess ◽  
Thomas Schrefl ◽  
Josef Fidler
Keyword(s):  
Layer Thickness ◽  
Exchange Bias ◽  
Ferromagnetic Layer ◽  
Bias Field ◽  
Training Effect ◽  
Hysteresis Cycle ◽  
Weak Exchange ◽  
Antiferromagnetic Layer ◽  
20 Nm ◽  
And Training

ABSTRACTExchange bias and training effect are simulated for IrMn/NiFe bilayers. As a function of the thickness of the antiferromagnet the bias field shows a maximum for a thickness of 22 nm. For decreasing antiferromagnetic thickness the domain wall energy approaches zero. For large thicknesses the high anisotropy energy hinders switching of the antiferromagnetic grains resulting in weak bias. Starting from the field cooled state as initial configuration a bias field of about 8 mT is obtained assuming a antiferromagnetic layer thickness of 20 nm, a ferromagnetic layer thickness of 10 nm, and a grain size of 10 nm. The next hysteresis cycle shows a reduction of the bias field by about 65%. Exchange bias and training effect in fully compensated antiferromagnet/ferromagnet bilayers are explained with a simple micromagnetic model. The model assumes no defects except for grain boundaries, and coupling is due to spin flop at a perfect interface. The simulations show that a weak exchange interaction between randomly oriented antiferromagnetic grains and spin flop coupling at a perfectly compensated interface are sufficient to support exchange bias.

scholarly journals Electric control of exchange bias in Co/FeOx bilayer by resistive switching

AIP Advances ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 015306
Author(s):  
Lujun Wei ◽  
Jiangtao Qu ◽  
Rongkun Zheng ◽  
Ruobai Liu ◽  
Yuan Yuan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Exchange Bias ◽  
Electric Control
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