Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory

2019 ◽  
Vol 5 (5) ◽  
pp. 1800833 ◽  
Author(s):  
Rulin Zhang ◽  
Hong Huang ◽  
Qing Xia ◽  
Cong Ye ◽  
Xiaodi Wei ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory

InfoMat ◽  
2020 ◽  
Vol 2 (5) ◽  
pp. 960-967 ◽  
Author(s):  
Mengting Zhao ◽  
Xiaobing Yan ◽  
Long Ren ◽  
Mengliu Zhao ◽  
Fei Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Quantum Conductance ◽  
Resistive Switching Memory ◽  
Switching Memory

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory

2018 ◽  
Vol 10 (25) ◽  
pp. 21445-21450 ◽  
Author(s):  
Tae Hyung Park ◽  
Young Jae Kwon ◽  
Hae Jin Kim ◽  
Hyo Cheon Woo ◽  
Gil Seop Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Resistive Switching Memory ◽  
Source And Sink ◽  
Switching Memory

Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

2017 ◽  
Vol 5 (25) ◽  
pp. 6319-6327 ◽  
Author(s):  
Teng-Yu Su ◽  
Chi-Hsin Huang ◽  
Yu-Chuan Shih ◽  
Tsang-Hsuan Wang ◽  
Henry Medina ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Schottky Diode ◽  
Defect Engineering ◽  
Resistive Switching Memory ◽  
Switching Memory

The role of defect engineering is essential in resistive switching memory.

scholarly journals Origin of oxygen vacancies in resistive switching memory devices

2009 ◽  
Vol 190 ◽  
pp. 012074 ◽  
Author(s):  
B P Andreasson ◽  
M Janousch ◽  
U Staub ◽  
G I Meijer ◽  
A Ramar ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Switching Memory

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.

A ferroelectric memristor based on the migration of oxygen vacancies

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 54113-54118 ◽  
Author(s):  
Pengfei Hou ◽  
Jinbin Wang ◽  
Xiangli Zhong ◽  
Yuexian Wu
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Non Destructive ◽  
Switching Memory

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory.

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