Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3 , Orthorhombic RbPbI3 , and Their Mixtures

2018 ◽  
Vol 5 (2) ◽  
pp. 1800586 ◽  
Author(s):  
SangMyeong Lee ◽  
Jaeho Choi ◽  
Jae Bum Jeon ◽  
Byeong Jo Kim ◽  
Ji Su Han ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conducting Bridge

scholarly journals Resistive Switching Memory: Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory (Small 41/2020)

Small ◽  
2020 ◽  
Vol 16 (41) ◽  
pp. 2070228
Author(s):  
Ji Su Han ◽  
Quyet Van Le ◽  
Hyojung Kim ◽  
Yoon Jung Lee ◽  
Da Eun Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Dual Phase ◽  
Resistive Switching Memory ◽  
Halide Perovskites ◽  
Conducting Bridge ◽  
Switching Memory

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

2013 ◽  
Vol 22 (9) ◽  
pp. 097101 ◽  
Author(s):  
Kai-Liang Zhang ◽  
Kai Liu ◽  
Fang Wang ◽  
Fu-Hong Yin ◽  
Xiao-Ying Wei ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Conducting Bridge ◽  
Switching Memory

Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory

2020 ◽  
Vol 12 (14) ◽  
pp. 17039-17045 ◽  
Author(s):  
SangMyeong Lee ◽  
Hyojung Kim ◽  
Dong Hoe Kim ◽  
Won Bin Kim ◽  
Jae Myeong Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Halide Perovskite ◽  
Conducting Bridge ◽  
Switching Memory

Analytically and empirically consistent characterization of resistive switching mechanism in Ag conducting-bridge random-access memory through pseudo-liquid approach

2021 ◽  
Author(s):  
Yeon-Joon Choi ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Kyungho Hong ◽  
Sungjoon Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Physical Analysis ◽  
Filament Formation ◽  
Access Memory ◽  
Metal Bonding ◽  
Conducting Bridge ◽  
Resistive Switching Mechanism

A new physical analysis of the filament formation in Ag conducting-bridge random-access memory (CBRAM) in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested. The movement...

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

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