scholarly journals High Seebeck Coefficient and Power Factor in n-Type Organic Thermoelectrics

2017 ◽  
Vol 4 (1) ◽  
pp. 1700501 ◽  
Author(s):  
Guangzheng Zuo ◽  
Zhaojun Li ◽  
Ergang Wang ◽  
Martijn Kemerink
Keyword(s):  
Seebeck Coefficient ◽  
Power Factor ◽  
High Seebeck Coefficient

Thermoelectric polymer films with a significantly high Seebeck coefficient and thermoelectric power factor obtained through surface energy filtering

2020 ◽  
Vol 8 (27) ◽  
pp. 13600-13609 ◽  
Author(s):  
Xin Guan ◽  
Erol Yildirim ◽  
Zeng Fan ◽  
Wanheng Lu ◽  
Bichen Li ◽  
...  
Keyword(s):  
Surface Energy ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Polymer Films ◽  
Thermoelectric Power Factor ◽  
Energy Filtering ◽  
High Seebeck Coefficient ◽  
Rhodamine 101

Coating with Rhodamine 101 can significantly enhance the Seebeck coefficient of PEDOT:PSS, and surface energy filtering is proposed to be the reason for this effect.

scholarly journals Effects of the Interface between Inorganic and Organic Components in a Bi2Te3–Polypyrrole Bulk Composite on Its Thermoelectric Performance

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3080
Author(s):  
Cham Kim ◽  
David Humberto Lopez
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermal Properties ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Energy Band ◽  
Phonon Scattering ◽  
Thermoelectric Performance ◽  
High Seebeck Coefficient ◽  
Fabrication Condition

We provided a method to hybridize Bi2Te3 with polypyrrole, thus forming an inorganic/organic bulk composite (Bi2Te3–polypyrrole), in which the effects of energy band junction and phonon scattering were expected to occur at the interface of the two components. Bi2Te3–polypyrrole exhibited a considerably high Seebeck coefficient compared to pristine Bi2Te3, and thus it recorded a somewhat increased power factor despite the loss in electrical conductivity caused by the organic component, polypyrrole. Bi2Te3–polypyrrole also exhibited much lower thermal conductivity than pristine Bi2Te3 because of the phonon scattering effect at the interface. We successfully brought about the decoupling phenomenon of electrical and thermal properties by devising an inorganic/organic composite and adjusting its fabrication condition, thereby optimizing its thermoelectric performance, which is considered the predominant property for n-type binary Bi2Te3 reported so far.

Influence of Carrier Density and Energy Barrier Scattering on a High Seebeck Coefficient and Power Factor in Transparent Thermoelectric Copper Iodide

2020 ◽  
Vol 3 (10) ◽  
pp. 10037-10044 ◽  
Author(s):  
Peter P. Murmu ◽  
Varun Karthik ◽  
Zihang Liu ◽  
Vedran Jovic ◽  
Takao Mori ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Power Factor ◽  
Energy Barrier ◽  
Carrier Density ◽  
Copper Iodide ◽  
High Seebeck Coefficient

Thermoelectric Generating Properties of Perovskite Like Materials

2010 ◽  
Vol 74 ◽  
pp. 72-76 ◽  
Author(s):  
Hitoshi Kohri ◽  
Masahiko Kato ◽  
Isao J. Ohsugi ◽  
Ichiro Shiota
Keyword(s):  
Electrical Resistivity ◽  
Solid State ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Solid State Reaction ◽  
Hot Pressing ◽  
High Performance ◽  
Waste Heat ◽  
Perovskite Layer ◽  
High Seebeck Coefficient

Research and development of thermoelectric generators have been actively carried out to use waste heat. It is well known some p-type oxides show high thermoelectric performance. However, an n-type oxide with high performance has not been found. An n-type CaMnO3 is a promising material because of its high Seebeck coefficient. The electrical resistivity of this oxide is, however, too high to use it practically. Not only high Seebeck coefficient but also low electrical resistivity is required for practical use. At first, we investigated the effects of element substitution in order to decrease the resistivity. N-type CaMn0.9M0.1O3 (M=Cu, In) compounds were prepared by solid-state reaction and hot pressing. The maximum value of power factor for CaMn0.9In0.1O3 was 0.204 mWm-1K-2, which was the largest of all specimens at 673 K. This value was, however, not enough to use it practically. Secondly, we focus attention on Aurivillius compounds. The Aurivillius compounds consist of Perovskite layers and Bi-O layers. We expect that this crystal structure shows large Seebeck coefficient due to the quantum confinement of electron in Perovskite layer. Bi2VO5.5 with Aurivillius structure was prepared by solid-state reaction and hot pressing. The Seebeck coefficient of Bi2VO5.5 decreased with increasing temperature and was positive value below 600 K and was negative value above 600 K. The power factor of annealed Bi2VO5.5 showed the highest value of all specimens at the temperature range above 800 K.

Comparative study of functionalized MXenes Mn+1CnO2 (M = Ti, Zr and Hf, n = 1, 2 and 3): A proposal for renewable energy applications

2021 ◽  
pp. 2150290
Author(s):  
Nasir Shehzad ◽  
Lixin Zhang ◽  
Shahzad Saeed ◽  
Anwar Ali
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Boltzmann Transport ◽  
Generalized Gradient ◽  
Metallic Behavior ◽  
Energy Applications ◽  
High Power Factor ◽  
High Seebeck Coefficient

Using first-principles calculations, we studied the electronic, structural and thermoelectric properties of two-dimensional (2D) MXenes [Formula: see text] ([Formula: see text] = Ti, Zr and Hf, [Formula: see text], 2 and 3). The calculations are carried out within the generalized gradient approximation (GGA). We have calculated the Boltzmann transport equation for finding the thermoelectric properties such as power factor, Seebeck coefficient and electrical conductivity. For [Formula: see text], these materials behave as semiconductors having an indirect bandgap nature. In contrast, for [Formula: see text] these materials show metallic behavior. Out of these MXenes, we found that Ti2CO2 has a high Seebeck coefficient value, whereas the electrical conductivity of Ti4C3O2 is exceptionally high. While among all these compounds, Ti2CO2 and Hf4C3O2 have a high power factor in the 300–1200-K temperature range.

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

Temperature-dependent hard X-ray photoemission spectra of ternary Tl compounds with high Seebeck coefficient

2009 ◽  
Vol 6 (5) ◽  
pp. 993-996 ◽  
Author(s):  
Kojiro Mimura ◽  
Takahiko Ishizu ◽  
Kazuya Yamamoto ◽  
Junta Takasu ◽  
Yuri Yonehira ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Temperature Dependent ◽  
X Ray ◽  
High Seebeck Coefficient
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