Improved Performance in n-Type Organic Field-Effect Transistors via Polyelectrolyte-Mediated Interfacial Doping

2017 ◽  
Vol 3 (10) ◽  
pp. 1700184 ◽  
Author(s):  
Yu Jung Park ◽  
Myoung Joo Cha ◽  
Yung Jin Yoon ◽  
Shinuk Cho ◽  
Jin Young Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Improved Performance

Improved performance uniformity of inkjet printed n-channel organic field-effect transistors and complementary inverters

2011 ◽  
Vol 12 (4) ◽  
pp. 634-640 ◽  
Author(s):  
Kang-Jun Baeg ◽  
Dongyoon Khim ◽  
Ju-Hwan Kim ◽  
Minji Kang ◽  
In-Kyu You ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Complementary Inverters ◽  
Improved Performance

Low-temperature sol–gel processed AlOx gate dielectric buffer layer for improved performance in pentacene-based OFETs

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28801-28808 ◽  
Author(s):  
Femi Igbari ◽  
Qi-Xun Shang ◽  
Yue-Min Xie ◽  
Xiu-Juan Zhang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Organic Field Effect Transistors ◽  
Gel Technique ◽  
Improved Performance

An approach to achieve improved performance in pentacene-based organic field effect transistors (OFETs) using high-k AlOx prepared by a low temperature sol–gel technique as a thin buffer layer on a SiO2 gate dielectric was demonstrated.

scholarly journals Effect of contact resistance in organic field‐effect transistors

Nano Select ◽  
2021 ◽  
Author(s):  
Yanjun Shi ◽  
Jie Liu ◽  
Yuanyuan Hu ◽  
Wenping Hu ◽  
Lang Jiang
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
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