scholarly journals Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

2016 ◽  
Vol 2 (4) ◽  
Author(s):  
Artem G. Shulga ◽  
Laura Piveteau ◽  
Satria Z. Bisri ◽  
Maksym V. Kovalenko ◽  
Maria A. Loi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Pbs Quantum Dot

Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

2016 ◽  
Vol 2 (4) ◽  
pp. 1500467 ◽  
Author(s):  
Artem G. Shulga ◽  
Laura Piveteau ◽  
Satria Z. Bisri ◽  
Maksym V. Kovalenko ◽  
Maria A. Loi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Pbs Quantum Dot

Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

2015 ◽  
Vol 106 (9) ◽  
pp. 093507 ◽  
Author(s):  
Hye-Mi So ◽  
Hyekyoung Choi ◽  
Hyung Cheoul Shim ◽  
Seung-Mo Lee ◽  
Sohee Jeong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Deposition Effect ◽  
Pbs Quantum Dot

Bias-Stress Effect in 1,2-Ethanedithiol-Treated PbS Quantum Dot Field-Effect Transistors

ACS Nano ◽  
2012 ◽  
Vol 6 (4) ◽  
pp. 3121-3127 ◽  
Author(s):  
Timothy P. Osedach ◽  
Ni Zhao ◽  
Trisha L. Andrew ◽  
Patrick R. Brown ◽  
Darcy D. Wanger ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effect ◽  
Bias Stress ◽  
Pbs Quantum Dot

scholarly journals Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating

ACS Nano ◽  
2018 ◽  
Vol 12 (12) ◽  
pp. 12805-12813 ◽  
Author(s):  
Artem G. Shulga ◽  
Simon Kahmann ◽  
Dmitry N. Dirin ◽  
Arko Graf ◽  
Jana Zaumseil ◽  
...  
Keyword(s):  
Solid State ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Pbs Quantum Dot

scholarly journals Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

2017 ◽  
Vol 9 (5) ◽  
pp. 4719-4724 ◽  
Author(s):  
Mohamad I. Nugraha ◽  
Roger Häusermann ◽  
Shun Watanabe ◽  
Hiroyuki Matsui ◽  
Mykhailo Sytnyk ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Trap States ◽  
High K ◽  
Pbs Quantum Dot

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

2021 ◽  
pp. 2101036
Author(s):  
Jiali Yi ◽  
Xingxia Sun ◽  
Chenguang Zhu ◽  
Shengman Li ◽  
Yong Liu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Full Range ◽  
Logic Circuits ◽  
Double Gate
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