scholarly journals Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015)

2015 ◽  
Vol 1 (10) ◽  
Author(s):  
Céline Ternon ◽  
Pauline Serre ◽  
Jean-Marie Lebrun ◽  
Virginie Brouzet ◽  
Maxime Legallais ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Electrical Contact ◽  
Low Temperature Processing

Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions

2015 ◽  
Vol 1 (10) ◽  
pp. 1500172 ◽  
Author(s):  
Céline Ternon ◽  
Pauline Serre ◽  
Jean-Marie Lebrun ◽  
Virginie Brouzet ◽  
Maxime Legallais ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Nanowire ◽  
Electrical Contact ◽  
Low Temperature Processing

Fabrication and Electrical Characterization of Silicon Nanowire Arrays

2004 ◽  
Vol 832 ◽  
Author(s):  
Sarah M. Dilts ◽  
Ahmad Mohmmad ◽  
Kok-Keong Lew ◽  
Joan M. Redwing ◽  
Suzanne E. Mohney
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Electrical Contact ◽  
Electrical Characterization ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Alumina Membranes ◽  
Boron Doped ◽  
Doped Silicon ◽  
Vls Growth

ABSTRACTHigh density boron-doped silicon nanowire arrays were fabricated within the pores of anodized alumina membranes via vapor-liquid-solid (VLS) growth Anodized alumina membranes with a nominal pore diameter of 200 nm served as templates for the sequential electrodeposition of silver, cobalt, and gold which served as the backside electrical contact, ohmic contact metal and catalyst metal for VLS growth, respectively. Boron-doped silicon nanowires were then synthesized within the pores by VLS growth using silane (SiH4) and trimethylboron (TMB) gas sources. Arrays of Al dots were deposited on the top surface of the membrane after nanowire growth. A series of samples was prepared with different SiNW lengths and boron doping levels. Two point probe measurements were used to measure the I-V characteristics of the silicon nanowire arrays before and after annealing. Nanowire resistivity and contact resistance were determined from plots of resistance versus nanowire length. The resistivity of the SiNW was observed to decrease with the addition of TMB during growth.

Changes in color characteristics of culinary products from turkey meat produced with the use of low-temperature heat treatment

Vsyo o myase ◽  
2020 ◽  
pp. 22-24
Author(s):  
Nasonova V.V. ◽  
◽  
Tunieva E.K. ◽  
Motovilina A.A. ◽  
Mileenkova E.V. ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Low Temperature ◽  
Production Technology ◽  
Meat Products ◽  
Oxidation Products ◽  
Turkey Meat ◽  
Color Characteristics ◽  
Low Temperature Processing ◽  
Temperature Heat ◽  
Temperature Heat Treatment

The paper presents the results of the study on the effect of low-temperature heat treatment on color characteristics and protein oxidation products depending on the method, temperature and duration of heat treatment of culinary products from turkey meat. At present, the use of low-temperature processing in the production technology for meat products with improved organoleptic indices is a topical direction.

scholarly journals Low-Temperature Processing of Dense HydroxyapatiteZirconia Composites

2008 ◽  
Vol 5 (1) ◽  
pp. 29-36 ◽  
Author(s):  
Yougojoti Nayak ◽  
Raghunath Rana ◽  
Swadesh Pratihar ◽  
Santanu Bhattacharyya
Keyword(s):  
Low Temperature ◽  
Low Temperature Processing

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Oxide nanopowders from the low-temperature processing of metal oxide sols and their application as gas-sensing materials

2006 ◽  
Vol 118 (1-2) ◽  
pp. 105-109 ◽  
Author(s):  
Mauro Epifani ◽  
Elisabetta Comini ◽  
Raül Díaz ◽  
Jordi Arbiol ◽  
Pietro Siciliano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Gas Sensing ◽  
Low Temperature Processing

scholarly journals Rapid and low temperature processing of mesoporous TiO2 for perovskite solar cells on flexible and rigid substrates

2017 ◽  
Vol 13 ◽  
pp. 232-240 ◽  
Author(s):  
Benjamin Feleki ◽  
Guy Bex ◽  
Ronn Andriessen ◽  
Yulia Galagan ◽  
Francesco Di Giacomo
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Perovskite Solar Cells ◽  
Mesoporous Tio2 ◽  
Low Temperature Processing

Modeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices

2011 ◽  
Vol 110 (3) ◽  
pp. 033524 ◽  
Author(s):  
Pier-Francesco Fazzini ◽  
Caroline Bonafos ◽  
Alain Claverie ◽  
Alexandre Hubert ◽  
Thomas Ernst ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Modeling Stress

Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method

2001 ◽  
Vol 79 (10) ◽  
pp. 1546-1548 ◽  
Author(s):  
M. K. Sunkara ◽  
S. Sharma ◽  
R. Miranda ◽  
G. Lian ◽  
E. C. Dickey
Keyword(s):  
Low Temperature ◽  
Silicon Nanowires ◽  
Vapor Liquid Solid ◽  
Vapor Liquid
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