scholarly journals Recent Advances in Stretchable and Transparent Electronic Materials

2016 ◽  
Vol 2 (5) ◽  
pp. 1500407 ◽  
Author(s):  
David McCoul ◽  
Weili Hu ◽  
Mengmeng Gao ◽  
Vishrut Mehta ◽  
Qibing Pei
Keyword(s):  
Electronic Materials ◽  
Recent Advances

scholarly journals Sensors Made of Natural Renewable Materials: Efficiency, Recyclability or Biodegradability—The Green Electronics

Sensors ◽  
2020 ◽  
Vol 20 (20) ◽  
pp. 5898
Author(s):  
Benoît Piro ◽  
Hoang Vinh Tran ◽  
Vu Thi Thu
Keyword(s):  
Electronic Materials ◽  
Packaging Materials ◽  
Renewable Materials ◽  
Active Materials ◽  
Recent Advances ◽  
Sensor Devices ◽  
Materials Used ◽  
Passive Materials ◽  
Green Electronics

Nowadays, sensor devices are developing fast. It is therefore critical, at a time when the availability and recyclability of materials are, along with acceptability from the consumers, among the most important criteria used by industrials before pushing a device to market, to review the most recent advances related to functional electronic materials, substrates or packaging materials with natural origins and/or presenting good recyclability. This review proposes, in the first section, passive materials used as substrates, supporting matrixes or packaging, whether organic or inorganic, then active materials such as conductors or semiconductors. The last section is dedicated to the review of pertinent sensors and devices integrated in sensors, along with their fabrication methods.

Materials and devices for transparent stretchable electronics

2017 ◽  
Vol 5 (9) ◽  
pp. 2202-2222 ◽  
Author(s):  
Tran Quang Trung ◽  
Nae-Eung Lee
Keyword(s):  
Mechanical Properties ◽  
Electronic Materials ◽  
Electronic Devices ◽  
Stretchable Electronics ◽  
Recent Advances

Herein, we review recent advances in transparent stretchable electronic materials and transparent stretchable electronic devices. Some representative examples that highlight the unique optical, electrical and mechanical properties of transparent stretchable materials and devices are also discussed in detail.

Recent Advances in High Dispersion Spectroscopy of Globular Cluster Stars

1988 ◽  
Vol 132 ◽  
pp. 525-530
Author(s):  
Raffaele G. Gratton
Keyword(s):  
Globular Cluster ◽  
Globular Clusters ◽  
High Dispersion ◽  
Photographic Material ◽  
Recent Advances ◽  
Metal Abundances ◽  
Ccd Detectors ◽  
Major Progress

The use CCD detectors has allowed a major progress in abundance derivations for globular cluster stars in the last years. Abundances deduced from high dispersion spectra now correlates well with other abundance indicators. I discuss some problems concerning the derivation of accurate metal abundances for globular clusters using high dispersion spectra from both the old photographic and the most recent CCD data. The discrepant low abundances found by Cohen (1980), from photographic material for M71 giants, are found to be due to the use of too high microturbulences.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Chelation-assisted transition metal-catalysed C–H chalcogenylations

2020 ◽  
Vol 7 (8) ◽  
pp. 1022-1060 ◽  
Author(s):  
Wenbo Ma ◽  
Nikolaos Kaplaneris ◽  
Xinyue Fang ◽  
Linghui Gu ◽  
Ruhuai Mei ◽  
...  
Keyword(s):  
Transition Metal ◽  
Recent Advances ◽  
Site Selectivity ◽  
Transition Metal Catalyzed ◽  
Metal Catalyzed

This review summarizes recent advances in C–S and C–Se formations via transition metal-catalyzed C–H functionalization utilizing directing groups to control the site-selectivity.

Sign in / Sign up

Export Citation Format

Share Document