scholarly journals Tailoring the Interfacial Band Offset by the Molecular Dipole Orientation for a Molecular Heterojunction Selector (Adv. Sci. 21/2021)

2021 ◽  
Vol 8 (21) ◽  
pp. 2170143
Author(s):  
Jung Sun Eo ◽  
Jaeho Shin ◽  
Seunghoon Yang ◽  
Takgyeong Jeon ◽  
Jaeho Lee ◽  
...  
Keyword(s):  
Band Offset ◽  
Dipole Orientation ◽  
Molecular Dipole

scholarly journals Tailoring the Interfacial Band Offset by the Molecular Dipole Orientation for a Molecular Heterojunction Selector

2021 ◽  
pp. 2101390
Author(s):  
Jung Sun Eo ◽  
Jaeho Shin ◽  
Seunghoon Yang ◽  
Takgyeong Jeon ◽  
Jaeho Lee ◽  
...  
Keyword(s):  
Band Offset ◽  
Dipole Orientation ◽  
Molecular Dipole

Determining the Molecular Dipole Orientation on Nanoplasmonic Structures

2018 ◽  
Vol 122 (29) ◽  
pp. 16901-16908 ◽  
Author(s):  
Thomas A. R. Purcell ◽  
Shira Yochelis ◽  
Yossi Paltiel ◽  
Tamar Seideman
Keyword(s):  
Dipole Orientation ◽  
Molecular Dipole

scholarly journals ENABLING STAR FORMATION VIA SPONTANEOUS MOLECULAR DIPOLE ORIENTATION IN ICY SOLIDS

2016 ◽  
Vol 832 (1) ◽  
pp. 1 ◽  
Author(s):  
Alexander Rosu-Finsen ◽  
Jérôme Lasne ◽  
Andrew Cassidy ◽  
Martin R. S. McCoustra ◽  
David Field
Keyword(s):  
Star Formation ◽  
Dipole Orientation ◽  
Molecular Dipole

scholarly journals Determination of molecular dipole orientation in doped fluorescent organic thin films by photoluminescence measurements

2010 ◽  
Vol 96 (7) ◽  
pp. 073302 ◽  
Author(s):  
Jörg Frischeisen ◽  
Daisuke Yokoyama ◽  
Chihaya Adachi ◽  
Wolfgang Brütting
Keyword(s):  
Thin Films ◽  
Organic Thin Films ◽  
Dipole Orientation ◽  
Molecular Dipole

scholarly journals Assigning a structural motif using spontaneous molecular dipole orientation in thin films

2018 ◽  
Vol 20 (46) ◽  
pp. 29038-29044 ◽  
Author(s):  
M. Roman ◽  
A. Dunn ◽  
S. Taj ◽  
Z. G. Keolopile ◽  
A. Rosu-Finsen ◽  
...  
Keyword(s):  
Thin Films ◽  
Methyl Formate ◽  
Structural Motif ◽  
Crystalline Solid ◽  
Dipole Orientation ◽  
Infrared Observations ◽  
Molecular Dipole

Guided by the spontelectric behaviour of thin films of cis-methyl formate, infrared observations and computational investigations reveal the dimer structural motif of the crystalline solid.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

Sign in / Sign up

Export Citation Format

Share Document