scholarly journals Electron–Phonon Coupling and Electron–Phonon Scattering in SrVO 3

2021 ◽  
pp. 2004207
Author(s):  
Mathieu Mirjolet ◽  
Francisco Rivadulla ◽  
Premysl Marsik ◽  
Vladislav Borisov ◽  
Roser Valentí ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Electron Phonon Scattering

scholarly journals Forward Electron–Phonon Scattering in Normal and Superconducting States

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3083-3086 ◽  
Author(s):  
O. V. Dolgov ◽  
O. V. Danylenko ◽  
M. L. Kulić ◽  
V. Oudovenko
Keyword(s):  
Critical Temperature ◽  
Density Of States ◽  
Phonon Scattering ◽  
Phonon Frequency ◽  
Coupling Constant ◽  
Phonon Coupling ◽  
Superconducting Properties ◽  
Electron Phonon Coupling ◽  
D Wave ◽  
Electron Phonon Scattering

The sharp forward electron–phonon (FEP) and impurity (FIS) scattering change the normal and superconducting properties significantly. The pseudo-gap like features are present in the density of states for ω<Ω, where Ω is the phonon frequency. The superconducting critical temperature T c , due to the FEP pairing, is linear with respect to the electron–phonon coupling constant. The FIS impurities are pair weakening for s- and d-wave pairing.

Raman scattering from impurities in semiconductors. II. Special cases

1978 ◽  
Vol 56 (5) ◽  
pp. 560-564
Author(s):  
Robert Barrie ◽  
H. -C. Chow
Keyword(s):  
Raman Scattering ◽  
General Result ◽  
Phonon Scattering ◽  
Phonon Coupling ◽  
Strong Electron ◽  
Impurities In Semiconductors ◽  
Electron Phonon Coupling ◽  
Special Cases ◽  
Weak Electron

Special cases of the general result for Raman scattering from an impurity in a semiconductor are discussed. For weak electron–phonon coupling the zero-phonon and one-phonon scattering intensities are derived. For strong electron–phonon coupling a comparison is made between two different approximations that have been previously used.

scholarly journals Direct determination of mode-projected electron-phonon coupling in the time domain

Science ◽  
2019 ◽  
Vol 366 (6470) ◽  
pp. 1231-1236 ◽  
Author(s):  
M. X. Na ◽  
A. K. Mills ◽  
F. Boschini ◽  
M. Michiardi ◽  
B. Nosarzewski ◽  
...  
Keyword(s):  
Time Domain ◽  
Phonon Scattering ◽  
Direct Determination ◽  
Spectral Weight ◽  
Characteristic Time Scale ◽  
Phonon Coupling ◽  
Strongly Coupled ◽  
Nonthermal Electrons ◽  
Electron Phonon Coupling ◽  
The Time Domain

Ultrafast spectroscopies have become an important tool for elucidating the microscopic description and dynamical properties of quantum materials. In particular, by tracking the dynamics of nonthermal electrons, a material’s dominant scattering processes can be revealed. Here, we present a method for extracting the electron-phonon coupling strength in the time domain, using time- and angle-resolved photoemission spectroscopy (TR-ARPES). This method is demonstrated in graphite, where we investigate the dynamics of photoinjected electrons at the K¯ point, detecting quantized energy-loss processes that correspond to the emission of strongly coupled optical phonons. We show that the observed characteristic time scale for spectral weight transfer mediated by phonon-scattering processes allows for the direct quantitative extraction of electron-phonon matrix elements for specific modes.

scholarly journals Polymerized hybrid perovskites with enhanced stability, flexibility and lattice rigidity

2021 ◽  
Author(s):  
Wenjing Chen ◽  
Yongliang Shi ◽  
Jia Chen ◽  
Pingchuan Ma ◽  
Zhibin Fang ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Phonon Coupling ◽  
Strong Electron ◽  
Light Emitting ◽  
Electron Phonon Coupling ◽  
External Stresses ◽  
Operation Stability ◽  
Halide Perovskites ◽  
Perovskite Lattice ◽  
Enhanced Stability

Abstract The intrinsic soft lattice nature of organometal halide perovskites (OHPs) makes them very tolerant to defects and ideal candidates for solution-processed optoelectronic devices. However, the soft lattice results in low stability towards external stresses such as heating and humidity, and induces high density of phonons, causing strong electron-phonon coupling. Here, we report solid-state polymerization of OHPs using unsaturated 4-vinylbenzylammonium as organoammonium cations without damaging perovskite structure and its tolerance to defects. The polymerized perovskites show enhanced stability and flexibility. Furthermore, the polymerized 4-vinylbenzylammonium group improves perovskite lattice rigidity substantially, resulting in reduced electron-phonon coupling and non-radiative recombination rate, and enhanced carrier mobility because of suppressed phonon scattering. We finally demonstrate efficient polymerized perovskite based light-emitting diodes with an external quantum efficiency of 23.2% and enhanced operation stability.

Contribution of Ballistic Electron Transport to Energy Transfer During Electron-Phonon Nonequilibrium in Thin Metal Films

2009 ◽  
Vol 131 (4) ◽  
Author(s):  
Patrick E. Hopkins ◽  
Pamela M. Norris
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Phonon Scattering ◽  
High Energy ◽  
Boltzmann Transport ◽  
Phonon Coupling ◽  
Ballistic Electron ◽  
Ballistic Electron Transport ◽  
Interface Scattering ◽  
Electron Phonon Coupling

With the ever decreasing characteristic lengths of nanomaterials, nonequilibrium electron-phonon scattering can be affected by additional scattering processes at the interface of two materials. Electron-interface scattering would lead to another path of energy flow for the high-energy electrons other than electron-phonon coupling in a single material. Traditionally, electron-phonon coupling in transport is analyzed with a diffusion (Fourier) based model, such as the two temperature model (TTM). However, in thin films with thicknesses less than the electron mean free path, ballistic electron transport could lead to electron-interface scattering, which is not taken into account in the TTM. The ballistic component of electron transport, leading to electron-interface scattering during ultrashort pulsed laser heating, is studied here by a ballistic-diffusive approximation of the Boltzmann transport equation. The results for electron-phonon equilibration times are compared with calculations with TTM based approximations and experimental data on Au thin films.

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Observation of Core Phonon in Electron–Phonon Coupling in Au25 Nanoclusters

2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin
Keyword(s):  
Phonon Coupling ◽  
Electron Phonon Coupling

scholarly journals Electron-phonon coupling in the magnetic Weyl semimetal ZrCo2Sn

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
I.Yu. Sklyadneva ◽  
R. Heid ◽  
P. M. Echenique ◽  
E. V. Chulkov
Keyword(s):  
Phonon Coupling ◽  
Weyl Semimetal ◽  
Electron Phonon Coupling

scholarly journals Dielectric screening in perovskite photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Low Voltage ◽  
Power Conversion ◽  
Surface Recombination ◽  
Open Circuit ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Dielectric Screening ◽  
Perovskite Photovoltaic ◽  
Reduced Surface

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

Sign in / Sign up

Export Citation Format

Share Document