scholarly journals Dithieno[3,2‐ b :2ʹ,3ʹ‐ d ]pyrrol‐Fused Asymmetrical Electron Acceptors: A Study into the Effects of Nitrogen‐Functionalization on Reducing Nonradiative Recombination Loss and Dipole Moment on Morphology

2020 ◽  
Vol 7 (5) ◽  
pp. 1902657 ◽  
Author(s):  
Wei Gao ◽  
Tao Liu ◽  
Rui Sun ◽  
Guangye Zhang ◽  
Yiqun Xiao ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Electron Acceptors ◽  
Nonradiative Recombination ◽  
Recombination Loss ◽  
Nitrogen Functionalization

Ternary Organic Solar Cells with Small Nonradiative Recombination Loss

2019 ◽  
Vol 4 (5) ◽  
pp. 1196-1203 ◽  
Author(s):  
Yuanpeng Xie ◽  
Tengfei Li ◽  
Jing Guo ◽  
Pengqing Bi ◽  
Xiaonan Xue ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Nonradiative Recombination ◽  
Recombination Loss

Organic Photovoltaic Electron Acceptors Behaving Aggregation-Induced Emission for Reduced Nonradiative Recombination

2021 ◽  
Author(s):  
Yawen Li ◽  
Yihang Zhang ◽  
Xia Zuo ◽  
Yuze Lin
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Electron Acceptors ◽  
Organic Photovoltaic ◽  
Nonradiative Recombination ◽  
Aggregation Induced Emission ◽  
Photovoltaic Materials ◽  
Fused Ring

We introduce a facile method to attach aggregation-induced emission (AIE) properties to fused ring electron acceptors by tetraphenylethylene decoration. Organic solar cells (OSCs) based on the AIE photovoltaic materials showed...

An Effective Method for Recovering Nonradiative Recombination Loss in Scalable Organic Solar Cells

2020 ◽  
Vol 30 (21) ◽  
pp. 2000417 ◽  
Author(s):  
Zhi Xing ◽  
Xiangchuan Meng ◽  
Rui Sun ◽  
Ting Hu ◽  
Zengqi Huang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Nonradiative Recombination ◽  
Recombination Loss

Analysis for nonradiative recombination loss and radiation degradation of Si space solar cells

2020 ◽  
Vol 29 (1) ◽  
pp. 98-108
Author(s):  
Masafumi Yamaguchi ◽  
Kan‐Hua Lee ◽  
Kenji Araki ◽  
Nobuaki Kojima ◽  
Yasuki Okuno ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nonradiative Recombination ◽  
Recombination Loss ◽  
Radiation Degradation

Optical Properties of Chromophores with Different Six-Membered N-Heterocyclic Aromatic Ring

2011 ◽  
Vol 236-238 ◽  
pp. 1598-1602
Author(s):  
Hai Tao Peng ◽  
Yue Zhi Cui ◽  
Tao Zhang ◽  
Yang Zhang ◽  
Hai Xing Guan
Keyword(s):  
Optical Properties ◽  
Dipole Moment ◽  
Charge Transfer ◽  
Quantum Yield ◽  
Aromatic Ring ◽  
Intramolecular Charge Transfer ◽  
Stokes Shift ◽  
Electron Acceptors ◽  
Methyl Groups ◽  
Molecular Dipole

A series of intramolecular charge transfer (ICT) molecules containing six-membered N-heterocyclic electron acceptors, as well as their phenyl analogue, have been synthesized. The pyrazine derivatives exhibit the largest quantum yield, stokes shift and the longest emission maxima wavelength due to the appropriate electronegativity of pyrazine, while the triazine derivative has much lower quantum yield due to its too strong ICT. The methyl groups at N-heterocyclic rings also have influence on the optical properties by disturbing the molecular dipole moment.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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