scholarly journals Hydrogen Peroxide-Treated Carbon Dot Phosphor with a Bathochromic-Shifted, Aggregation-Enhanced Emission for Light-Emitting Devices and Visible Light Communication

2018 ◽  
Vol 5 (8) ◽  
pp. 1800369 ◽  
Author(s):  
Zhengjie Zhou ◽  
Pengfei Tian ◽  
Xiaoyan Liu ◽  
Shiliang Mei ◽  
Ding Zhou ◽  
...  
Nanoscale ◽  
2019 ◽  
Vol 11 (8) ◽  
pp. 3489-3494 ◽  
Author(s):  
Zhen Tian ◽  
Pengfei Tian ◽  
Xiaojie Zhou ◽  
Gufan Zhou ◽  
Shiliang Mei ◽  
...  

UV-pumped white light emissive carbon dot based phosphors produced by homogeneously embedding RGB emissive carbon dots in a silica matrix.


1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.


Nanophotonics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 1981-1988 ◽  
Author(s):  
Ning Li ◽  
Ying Suet Lau ◽  
Yanqin Miao ◽  
Furong Zhu

AbstractIn this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a forward bias of >2 V, achieving a high luminance of >103 cd/m2 at 7 V. It becomes an efficient photodetector when the bi-functional diode is operated at a reverse bias, exhibiting sensitivity over a broadband wavelength range from ultraviolet to visible light. The bi-functional diode possesses very fast transient electroluminescence (EL) and photo-response characteristics, e.g. with a short EL rising time of ~6 μS and a photo-response time of ~150 μS. In addition, the bi-functional diode also is sensitive to 520 nm, the wavelength of its peak EL emission. The ability of the bi-functional diodes for application in high speed visible light communication was analyzed and demonstrated using two identical bi-functional diodes, one performed as the signal generator and the other acted as a signal receiver. The dual functions of light emission and light detection capability, enabled by bi-functional diodes, are very attractive for different applications in under water communication and visible light telecommunications.


2017 ◽  
Vol 54 (5) ◽  
pp. 050602
Author(s):  
张宇飞 Zhang Yufei ◽  
张洪明 Zhang Hongming ◽  
王鹏 Wang Peng ◽  
刘涛 Liu Tao ◽  
孙德栋 Sun Dedong ◽  
...  

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