scholarly journals Second‐Order Optical Response in Electrically Polarized Sodo‐Niobate Amorphous Thin Films: Particularity of Multilayer Systems

2021 ◽  
pp. 2000171
Author(s):  
Lara Karam ◽  
Frédéric Adamietz ◽  
Dominique Michau ◽  
Ganapathy Senthil Murugan ◽  
Thierry Cardinal ◽  
...  
2010 ◽  
Author(s):  
Tatiana A. Vakhonina ◽  
Sirina M. Sharipova ◽  
Nataliya V. Ivanova ◽  
Olga D. Fominykh ◽  
Nickolai N. Smirnov ◽  
...  

2004 ◽  
Vol 121 (1) ◽  
pp. 1 ◽  
Author(s):  
Mikael Siltanen ◽  
Stefano Cattaneo ◽  
Elina Vuorimaa ◽  
Helge Lemmetyinen ◽  
Thomas J. Katz ◽  
...  

Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.


2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.


2003 ◽  
Vol 15 (21) ◽  
pp. 1826-1828 ◽  
Author(s):  
V. Lyahovitskaya ◽  
I. Zon ◽  
Y. Feldman ◽  
S.R. Cohen ◽  
A.K. Tagantsev ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document