scholarly journals High-Quality Indium Phosphide Films and Nano-Network Grown Using Low-Cost Metal-Catalyzed Vapor-Liquid-Solid Method for Photovoltaic Applications

2018 ◽  
Vol 6 (20) ◽  
pp. 1800136 ◽  
Author(s):  
Seyed Ebrahim Hashemi Amiri ◽  
Lin Gan ◽  
Fan Fan ◽  
Praneeth Ranga ◽  
Cun-Zheng Ning
CrystEngComm ◽  
2012 ◽  
Vol 14 (2) ◽  
pp. 585-589 ◽  
Author(s):  
Zai-Xing Yang ◽  
Wei Zhong ◽  
Peng Zhang ◽  
Mei-Hua Xu ◽  
Chak-Tong Au ◽  
...  

2010 ◽  
Vol 10 (7) ◽  
pp. 2842-2846 ◽  
Author(s):  
Seid Jebril ◽  
Hanna Kuhlmann ◽  
Sven Müller ◽  
Carsten Ronning ◽  
Lorenz Kienle ◽  
...  

2014 ◽  
Vol 389 ◽  
pp. 103-107 ◽  
Author(s):  
Ya'akov Greenberg ◽  
Alex Kelrich ◽  
Yonatan Calahorra ◽  
Shimon Cohen ◽  
Dan Ritter

2011 ◽  
Vol 1350 ◽  
Author(s):  
B. L. Williams ◽  
B. Mendis ◽  
L. Bowen ◽  
D. P. Halliday ◽  
K. Durose

ABSTRACTArrays of CdTe nanowires have been grown on conductive, flexible Mo substrates by the vapor-liquid-solid technique. A method of forming the arrays on a largely continuous CdTe film is described. For producing nanowire solar cells, this structure provides the advantage of preventing shunts. Nanowires having diameters in the range 100-500 nm and lengths up to 100 μm were generated. The influence of growth temperature, time and pressure on the morphology of deposited layers was investigated, and a mechanism for the generation of layer/nanowire combinations is postulated. Characterization by SEM, TEM and low temperature photoluminescence is presented.


2020 ◽  
Vol 31 (33) ◽  
pp. 335601 ◽  
Author(s):  
Wenfeng Wang ◽  
Haibo Shu ◽  
Dong Zhou ◽  
Jun Wang ◽  
Xiaoshuang Chen

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.


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