Large-Area Low-Cost Tunable Plasmonic Perfect Absorber in the Near Infrared by Colloidal Etching Lithography

2015 ◽  
Vol 3 (3) ◽  
pp. 398-403 ◽  
Author(s):  
Ramon Walter ◽  
Andreas Tittl ◽  
Audrey Berrier ◽  
Florian Sterl ◽  
Thomas Weiss ◽  
...  
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Joo-Hyun Kim ◽  
Hyemi Han ◽  
Min Kyu Kim ◽  
Jongtae Ahn ◽  
Do Kyung Hwang ◽  
...  

AbstractAlthough solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work, we present a near-infrared photodetector functioning at 980 nm based on solution-processed CIGS with a potassium-induced bandgap grading structure and chalcopyrite grain growth. The incorporation of potassium in the CIGS film promotes Se uptake in the bulk of the film during the chalcogenization process, resulting in a bandgap grading structure with a wide space charge region that allows improved light absorption in the near-infrared region and charge carrier separation. Also, increasing the Se penetration in the potassium-incorporated CIGS film leads to the enhancement of chalcopyrite crystalline grain growth, increasing charge carrier mobility. Under the reverse bias condition, associated with hole tunneling from the ZnO interlayer, the increasing carrier mobility of potassium-incorporated CIGS photodetector improved photosensitivity and particularly external quantum efficiency more than 100% at low light intensity. The responsivity and detectivity of the potassium-incorporated CIGS photodetector reach 1.87 A W−1 and 6.45 $$\times$$ ×  1010 Jones, respectively, and the − 3 dB bandwidth of the device extends to 10.5 kHz under 980 nm near-infrared light.


2020 ◽  
Vol 28 (25) ◽  
pp. 38355
Author(s):  
Cheng Chen ◽  
Zhao-yi Wang ◽  
Zhi-gang Zheng ◽  
Yanhua Liu ◽  
Wenbin Huang ◽  
...  

2019 ◽  
Vol 7 (13) ◽  
pp. 3711-3729 ◽  
Author(s):  
Ning Li ◽  
Zhaojue Lan ◽  
Linfeng Cai ◽  
Furong Zhu

Solution processable near infrared (NIR) photodetectors provide a promising alternative due to their low cost, flexible design, adaptability to various fabrications, and large area manufacturability, removing the limitations of traditional wafer-based inorganic semiconductor techniques. High performing NIR photodetectors offer attractive options for applications in visualizing NIR light, health and safety monitoring.


Nano Research ◽  
2020 ◽  
Vol 14 (3) ◽  
pp. 858-867
Author(s):  
Carlo Mennucci ◽  
Debasree Chowdhury ◽  
Giacomo Manzato ◽  
Matteo Barelli ◽  
Roberto Chittofrati ◽  
...  

AbstractMultifunctional flexible Au electrodes based on one-dimensional (1D) arrays of plasmonic gratings are nanofabricated over large areas with an engineered variant of laser interference lithography optimized for low-cost transparent templates. Au nanostripe (NS) arrays achieve sheet resistance in the order of 20 Ohm/square on large areas (∼ cm2) and are characterized by a strong and dichroic plasmonic response which can be easily tuned across the visible (VIS) to near-infrared (NIR) spectral range by tailoring their cross-sectional morphology. Stacking vertically a second nanostripe, separated by a nanometer scale dielectric gap, we form near-field coupled Au/SiO2/Au dimers which feature hybridization of their localized plasmon resonances, strong local field-enhancements and a redshift of the resonance towards the NIR range. The possibility to combine excellent transport properties and optical transparency on the same plasmonic metasurface template is appealing in applications where low-energy photon management is mandatory like e.g., in plasmon enhanced spectroscopies or in photon harvesting for ultrathin photovoltaic devices. The remarkable lateral order of the plasmonic NS gratings provides an additional degree of freedom for tailoring the optical response of the multifunctional electrodes via the excitation of surface lattice resonances, a Fano-like coupling between the broad localised plasmonic resonances and the collective sharp Rayleigh modes.


2019 ◽  
Vol 7 (9) ◽  
pp. 1970035
Author(s):  
Shaowei Wang ◽  
Feiliang Chen ◽  
Ruonan Ji ◽  
Mingming Hou ◽  
Fei Yi ◽  
...  

2015 ◽  
Vol 659 ◽  
pp. 399-403 ◽  
Author(s):  
Rong Hong Hong ◽  
Cheng Cih ◽  
To Chung Shu ◽  
Sen Yeu Yang

We develop a simple and competitive fabrication of antireflective (AR) films with high-ordered nanostructure arrays on polycarbonate (PC) substrate by using gas-assisted hot embossing and a self-assembled technique. In this method, a self-assembled monolayer of polystyrene (PS) nanospheres is well-patterned on glass substrates as the first template. Subsequently, we use the plasma sputtering to deposit a conductive layer onto the surface of nanosphere (NS) patterned substrates, and then, electroforming is applied to fabricate a nickel mold with an inverse shape of nanospheres. In the last step, a unique glass transition is utilized to duplicate nanostructures on PC films via gas-assisted hot embossing. Not only in visible light but in near infrared, the optical properties of this AR film are similar or better than for other methods. This fabrication process also has great potential in industry, with its simplicity, large-area but low-cost.


ACS Sensors ◽  
2016 ◽  
Vol 1 (9) ◽  
pp. 1148-1154 ◽  
Author(s):  
Shahin Bagheri ◽  
Nikolai Strohfeldt ◽  
Florian Sterl ◽  
Audrey Berrier ◽  
Andreas Tittl ◽  
...  

2019 ◽  
Vol 7 (9) ◽  
pp. 1801596 ◽  
Author(s):  
Shaowei Wang ◽  
Feiliang Chen ◽  
Ruonan Ji ◽  
Mingming Hou ◽  
Fei Yi ◽  
...  

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.


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