scholarly journals Analytical Study of Solution‐Processed Tin Oxide as Electron Transport Layer in Printed Perovskite Solar Cells

2020 ◽  
pp. 2000282
Author(s):  
Valentina Rohnacher ◽  
Florian Ullrich ◽  
Helge Eggers ◽  
Fabian Schackmar ◽  
Sebastian Hell ◽  
...  
2018 ◽  
Vol 6 (19) ◽  
pp. 9132-9138 ◽  
Author(s):  
Guannan Yin ◽  
Huan Zhao ◽  
Jiangshan Feng ◽  
Jie Sun ◽  
Junqing Yan ◽  
...  

In this paper, it is demonstrated that two-dimensional TiS2 nanosheets can be applied as an effective ETL in planar PSCs for the first time.


2020 ◽  
Vol 471 ◽  
pp. 228443
Author(s):  
P. Sakthivel ◽  
Shini Foo ◽  
M. Thambidurai ◽  
P.C. Harikesh ◽  
Nripan Mathews ◽  
...  

2020 ◽  
Vol 8 (33) ◽  
pp. 11638-11646 ◽  
Author(s):  
Wenxiao Gong ◽  
Heng Guo ◽  
Haiyan Zhang ◽  
Jian Yang ◽  
Haiyuan Chen ◽  
...  

Both wetting and non-wetting tin oxide SnO2 were spin-coated and the non-wetting electron transport layer demonstrated a larger perovskite and higher power conversion efficiency.


2015 ◽  
Vol 3 (22) ◽  
pp. 11750-11755 ◽  
Author(s):  
Jiang Liu ◽  
Cheng Gao ◽  
Lizhu Luo ◽  
Qinyan Ye ◽  
Xulin He ◽  
...  

Low-temperature, solution processed metal sulfide is introduced as an electron transport layer for perovskite solar cells.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3090
Author(s):  
Jun Choi ◽  
Young Ki Park ◽  
Hee Dong Lee ◽  
Seok Il Hong ◽  
Woosung Lee ◽  
...  

A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO4 thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing conditions for sol-gel synthesis produce a ZrSnO4 thin film that exhibits high optical transmittance in the UV-Vis-NIR range, a suitable conduction band maximum, and good electrical conductivity, revealing its potential for application in the ETL of planar-heterojunction PSCs. Consequently, the ZrSnO4 ETL-based devices deliver promising power conversion efficiency (PCE) up to 19.05% from CH3NH3PbI3-based planar-heterojunction devices. Furthermore, the optimal ZrSnO4 ETL also contributes to decent long-term stability of the non-encapsulated device for 360 h in an ambient atmosphere (T~25 °C, RH~55%,), suggesting great potential of the sol-gel-driven ZrSnO4 thin film for a robust solution-processed ETL material in high-performance PSCs.


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