Monolithic Integration of Ion-Selective Organic Electrochemical Transistors with Thin Film Transistors on Flexible Substrates

2018 ◽  
Vol 4 (3) ◽  
pp. 1800577 ◽  
Author(s):  
Adrien Pierre ◽  
Sean E. Doris ◽  
René Lujan ◽  
Robert A. Street
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Monolithic Integration ◽  
Flexible Substrates ◽  
Organic Electrochemical Transistors

scholarly journals Mechanics of thin-film transistors and solar cells on flexible substrates

Solar Energy ◽  
2006 ◽  
Vol 80 (6) ◽  
pp. 687-693 ◽  
Author(s):  
Helena Gleskova ◽  
I-Chun Cheng ◽  
Sigurd Wagner ◽  
James C. Sturm ◽  
Zhigang Suo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Transistors ◽  
Flexible Substrates

Fully Printed, High Performance Carbon Nanotube Thin-Film Transistors on Flexible Substrates

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3864-3869 ◽  
Author(s):  
Pak Heng Lau ◽  
Kuniharu Takei ◽  
Chuan Wang ◽  
Yeonkyeong Ju ◽  
Junseok Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
High Performance ◽  
Flexible Substrates

Pentacene Thin Film Transistors and Circuits: Influence of Processing and Device Design

2002 ◽  
Vol 725 ◽  
Author(s):  
D. Knipp ◽  
R. A. Street ◽  
B. Krusor ◽  
J. HO
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Self Assembled Monolayers ◽  
Flexible Substrates ◽  
Thermal Oxide ◽  
Chemical Vapor Deposited ◽  
Structural And Electronic Properties ◽  
Assembled Monolayers

AbstractThe influence of different dielectrics on the structural and electronic properties of pentacene films and TFTs is discussed. The pentacene films were thermally evaporated on inorganic dielectrics compatible with flexible substrates. A strong correlation between morphology and structural properties of the pentacene films and the mobility of the TFTs was observed for all the dielectrics studied. In the case of plasma enhanced chemical vapor deposited (PECVD) silicon nitride and silicon oxide dielectrics the growth of pentacene is mainly determined by the roughness of the dielectric. The roughness inhibits the ordering of pentacene molecules on the surface. However, by optimizing the fabrication process of the dielectrics, we have achieved similar pentacene mobilities on PECVD dielectrics and thermal oxide (0.4 cm2/Vs), without employing self-assembled monolayers like octadecyltrichlorosilane (OTS). An OTS treatment of oxide based dielectrics leads to an increase of the mobility by a factor of 2-3 up to >1cm2/Vs for thermal oxide. Pentacene films on inorganic dielectrics exhibit mobilities from of 0.2-1.2 cm2/Vs and high on/off ratios between 107 and 108.

High-Frequency Rectifiers Based on Organic Thin-Film Transistors on Flexible Substrates

2020 ◽  
Vol 67 (6) ◽  
pp. 2365-2371
Author(s):  
Ghada H. Ibrahim ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
Leonhard Reindl
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Flexible Substrates ◽  
Organic Thin Film
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