Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors

2018 ◽  
Vol 3 (8) ◽  
pp. 1800133 ◽  
Author(s):  
Nowzesh Hasan ◽  
Bo Hou ◽  
Arden L. Moore ◽  
Adarsh D. Radadia
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Heterostructure Field Effect Transistors

Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors

Nano Letters ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 3963-3969 ◽  
Author(s):  
Seungho Kim ◽  
Gyuho Myeong ◽  
Jihoon Park ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Black Phosphorus ◽  
Tunnel Barrier

scholarly journals Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

2020 ◽  
Vol 12 (16) ◽  
pp. 18667-18673 ◽  
Author(s):  
Gaurav Pande ◽  
Jyun-Yan Siao ◽  
Wei-Liang Chen ◽  
Chien-Ju Lee ◽  
Raman Sankar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Schottky Barriers

Reversible photo-induced doping in WSe2 field effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (15) ◽  
pp. 7358-7363 ◽  
Author(s):  
Xuyi Luo ◽  
Kraig Andrews ◽  
Tianjiao Wang ◽  
Arthur Bowman ◽  
Zhixian Zhou ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Visible Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Light Illumination ◽  
Two Dimensional ◽  
Tungsten Diselenide ◽  
Low Intensity ◽  
Visible Light Illumination

We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm−2).

Extended Gate Ion-Sensitive Field-Effect Transistors Using Al2O3/Hexagonal Boron Nitride Nanolayers for pH Sensing

2019 ◽  
Vol 3 (1) ◽  
pp. 403-408 ◽  
Author(s):  
Wei Wei ◽  
Zhe Zeng ◽  
Wugang Liao ◽  
Wai Kin Chim ◽  
Chunxiang Zhu
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Ph Sensing

scholarly journals Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

2017 ◽  
Vol 28 (48) ◽  
pp. 485203 ◽  
Author(s):  
Pedro C Feijoo ◽  
Francisco Pasadas ◽  
José M Iglesias ◽  
María J Martín ◽  
Raúl Rengel ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Frequency Stability ◽  
Limiting Factor
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