Heterogeneous Integration of Microscale GaN Light-Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

2017 ◽  
Vol 3 (1) ◽  
pp. 1700239 ◽  
Author(s):  
Lizhu Li ◽  
Changbo Liu ◽  
Yuanzhe Su ◽  
Junchun Bai ◽  
Jianqiu Wu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Heterogeneous Integration ◽  
Flexible Substrates ◽  
Light Emitting

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes

2015 ◽  
Vol 104 ◽  
pp. 20-24 ◽  
Author(s):  
Soo Hyun Lee ◽  
Dong Churl Kim ◽  
Jongbae Kim ◽  
Soo-Kun Jeon ◽  
Jae Su Yu
Keyword(s):  
Flip Chip ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Light Emitting

Thermal Characteristics of High-Power LED Packages with Dissipation Film

2013 ◽  
Vol 397-400 ◽  
pp. 1767-1771
Author(s):  
Cheng Yi Hsu ◽  
Yu Li Lin
Keyword(s):  
High Power ◽  
Diamond Film ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Thermal Characteristics ◽  
Large Change ◽  
Junction Temperature ◽  
Conduction Model ◽  
Element Analysis ◽  
Light Emitting

A simple, fast, and reliable characterization method for measuring junction temperature (Tj) on high power GaN-based light emitting diodes (LED) was presented in this study. Thermal characteristics of high power Light-emitting-diode have been analyzed by using a three-dimensional thermal conduction model. Maximum operation temperature has also been calculated. The induced thermal behaviors of the best package processes for LED device with diamond film were investigated by finite element analysis (FEA) and by experimental measurement. The large change of forward operation voltage with temperature in light emitting diodes is advantageously used to measure junction temperature. Using this method, junction temperature (Tj) of LED under various structures and chip mounting methods was measured. It was found that the junction temperature can be reduced considerably by using diamond film substrates to replace sapphire substrate. In this study, the junction temperature can be decreased by about 14.3% under 1.5W power and decreased by about 15.9% under 1W power for 1mm square die. The thermal resistance (RT) can be measured to be 14.8°C/W under 1.5W power and 16.6°C/W under 1.W power.

scholarly journals Effect of the Thermal Characteristics of Phosphor for the Conformal and Remote Structures in White Light-Emitting Diodes

2013 ◽  
Vol 5 (5) ◽  
pp. 8200508-8200508 ◽  
Author(s):  
K. J. Chen ◽  
B. C. Lin ◽  
H. C. Chen ◽  
M. H. Shih ◽  
C. H. Wang ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Light Emitting ◽  
White Light Emitting Diodes

scholarly journals Emergence of Flexible White Organic Light-Emitting Diodes

Polymers ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 384 ◽  
Author(s):  
Dongxiang Luo ◽  
Qizan Chen ◽  
Baiquan Liu ◽  
Ying Qiu
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
State Of The Art ◽  
Organic Light Emitting Diodes ◽  
Flexible Substrates ◽  
Light Emitting ◽  
Organic Light ◽  
Transparent Conducting ◽  
Transparent Conducting Electrodes ◽  
Selection Of

Flexible white organic light-emitting diodes (FWOLEDs) have considerable potential to meet the rapidly growing requirements of display and lighting commercialization. To achieve high-performance FWOLEDs, (i) the selection of effective flexible substrates, (ii) the use of transparent conducting electrodes, (iii) the introduction of efficient device architectures, and iv) the exploitation of advanced outcoupling techniques are necessary. In this review, recent state-of-the-art strategies to develop FWOLEDs have been summarized. Firstly, the fundamental concepts of FWOLEDs have been described. Then, the primary approaches to realize FWOLEDs have been introduced. Particularly, the effects of flexible substrates, conducting electrodes, device architectures, and outcoupling techniques in FWOLEDs have been comprehensively highlighted. Finally, issues and ways to further enhance the performance of FWOLEDs have been briefly clarified.

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