Ion Beam Defect Engineering on ReS2 /Si Photocathode with Significantly Enhanced Hydrogen Evolution Reaction

2018 ◽  
Vol 6 (3) ◽  
pp. 1801663 ◽  
Author(s):  
Wentian Huang ◽  
Qingwei Zhou ◽  
Shaoqiang Su ◽  
Jing Li ◽  
Xubin Lu ◽  
...  
Nano Research ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1613-1618 ◽  
Author(s):  
Cheng Sun ◽  
Peipei Wang ◽  
Hao Wang ◽  
Chuan Xu ◽  
Juntong Zhu ◽  
...  

Carbon ◽  
2020 ◽  
Vol 166 ◽  
pp. 388-395 ◽  
Author(s):  
Yongqing Shen ◽  
Peizhi Liu ◽  
Jinlong Du ◽  
Yanhui Song ◽  
Hailiang Cao ◽  
...  

Small ◽  
2017 ◽  
Vol 14 (9) ◽  
pp. 1703098 ◽  
Author(s):  
Junjun Zhang ◽  
Chenhui Zhang ◽  
Zhenyu Wang ◽  
Jian Zhu ◽  
Zhiwei Wen ◽  
...  

NANO ◽  
2015 ◽  
Vol 10 (06) ◽  
pp. 1550082 ◽  
Author(s):  
Yumeng Zhao ◽  
Bin Yang ◽  
Xinyu Hao ◽  
Zhijing Zhao

CeO x/ C supported PtCu thin film catalysts were prepared by ion beam sputtering (IBS) and subsequently annealed at 400°C under vacuum environment and electrochemically dealloyed. Scanning transmission electronic microscope (STEM) and atomic force microscope (AFM) characterizations show that the surface of post-processed catalyst presents nanoporous structure and has a high root mean square roughness (RMS = 13.9nm). Electrochemical measurements indicate that the post-processed PtCu – CeO x/ C catalyst shows higher catalytic activity towards hydrogen evolution reaction than pure Pt / C . While inductively coupled plasma atomic emission spectroscopy (ICP-AES) analysis displays that the platinum ( Pt ) loading of the post-processed PtCu – CeO x/ C is 0.1192mg/cm2, decreasing by 20% compare to pure Pt / C (0.1490mg/cm2). X-ray photoelectron spectroscopy (XPS) analysis confirms that the surface of post-processed PtCu – CeO x/ C enrich Pt and analyzes the chemical valence of Pt element using depth profiling technology. It can be inferred that the enhancement in catalytic property is attributed to the combined action between geometric structure effect and electronic modification effect of Pt atoms from CeO x support.


2017 ◽  
Vol 9 (49) ◽  
pp. 42688-42698 ◽  
Author(s):  
Haibo Shu ◽  
Dong Zhou ◽  
Feng Li ◽  
Dan Cao ◽  
Xiaoshuang Chen

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