The Role of Humidity in Tuning the Texture and Electrical Properties of Cu2O Thin Films Deposited via Aerosol‐Assisted CVD

2018 ◽  
pp. 1801364 ◽  
Author(s):  
Hongjun Liu ◽  
Viet Huong Nguyen ◽  
Hervé Roussel ◽  
Isabelle Gélard ◽  
Laetitia Rapenne ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Cu2o Thin Films

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

Orientation dependence of electrical properties of polycrystalline Cu2O thin films

2020 ◽  
Vol 35 (7) ◽  
pp. 075016
Author(s):  
Miguel Tibério ◽  
Tomás Calmeiro ◽  
Suman Nandy ◽  
Daniela Nunes ◽  
Rodrigo Martins ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Orientation Dependence ◽  
Cu2o Thin Films

scholarly journals In-depth study on structural, optical, photoluminescence and electrical properties of electrodeposited Cu2O thin films for optoelectronics: An effect of solution pH

2019 ◽  
Vol 210 ◽  
pp. 27-34 ◽  
Author(s):  
C. Ravichandiran ◽  
A. Sakthivelu ◽  
R. Davidprabu ◽  
S. Valanarasu ◽  
A. Kathalingam ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Solution Ph ◽  
Depth Study ◽  
Cu2o Thin Films

The role of the electrode configuration on the electrical properties of small-molecule semiconductor thin-films

2017 ◽  
Vol 49 ◽  
pp. 107-113 ◽  
Author(s):  
Leandro Merces ◽  
Rafael Furlan de Oliveira ◽  
Henrique Leonel Gomes ◽  
Carlos César Bof Bufon
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Small Molecule ◽  
Electrode Configuration ◽  
Semiconductor Thin Films

Investigations on the role of alkali to obtain modulated defect concentrations for Cu2O thin films

2014 ◽  
Vol 289 ◽  
pp. 430-436 ◽  
Author(s):  
Anirban Chowdhury ◽  
Pavan Kumar Bijalwan ◽  
Ranjan Kumar Sahu
Keyword(s):  
Thin Films ◽  
Cu2o Thin Films

Growth and Characterization of Poly-SiGe Prepared by Reactive Thermal CVD

2004 ◽  
Vol 808 ◽  
Author(s):  
Jianjun Zhang ◽  
Kousaku Shimizu ◽  
Jun-ichi Hanna
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Growth Rate ◽  
Crystal Growth ◽  
Electrical Properties ◽  
Flow Rate ◽  
Amorphous Film ◽  
Thermal Cvd

ABSTRACTWe have prepared poly-Si1-xGex thin films with different germanium contents (Ge=5%∼40%) by reactive thermal CVD. In this study, the Ge content was controlled by varying the source gases GeF4 flow rate at a fixed Si2H6 flow rate. The effects of GeF4 flow rate on growth rate, film crystallinity, and electrical properties were investigated. The films were always polycrystalline when GeF4 was introduced even in a small amount, while only amorphous film deposited without GeF4. With an increase in GeF4 flow rate, Ge content and conductivity of the films increased and its activation energy decreased. When GeF4 flow rate over a certain value, the growth rate decrease and finally no film could be deposited. These behaviors are discussed in relation with a role of GeF4 for the crystal growth at a low temperature.

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