Ultrahigh‐Performance Optoelectronic Skin Based on Intrinsically Stretchable Perovskite‐Polymer Heterojunction Transistors

2021 ◽  
pp. 2107304
Author(s):  
Kai Liu ◽  
Yangshuang Bian ◽  
Junhua Kuang ◽  
Xin Huang ◽  
Yi Li ◽  
...  
Keyword(s):  
Heterojunction Transistors

Graphene and Carbon Nanotube Heterojunction Transistors with Individual Gate Control

ACS Nano ◽  
2019 ◽  
Vol 13 (4) ◽  
pp. 4771-4777 ◽  
Author(s):  
Mao Shiomi ◽  
Yuta Mochizuki ◽  
Yuki Imakita ◽  
Takayuki Arie ◽  
Seiji Akita ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Gate Control ◽  
Heterojunction Transistors

Properties of Ohmic Contacts to Heterojunction Transistors

1990 ◽  
Vol 181 ◽  
Author(s):  
H. Barry Harrison
Keyword(s):  
Physical Properties ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Active Channel ◽  
Heterojunction Transistors

ABSTRACTThe electrical and physical properties of the contact between the active channel of high electron mobility transistors (HEMT’s) and the source or drain contacts play an important role in determining the transistor characteristics. This paper considers electrical models that may be applied to the various techniques now available to form these Interconnections. Results of electrical (and some physical) studies with regard to these systems are then discussed and compared where possible with predictions made using the electrical models. The comparisons show that the electrical models provide a useful base to identify the important parameters in these interconnections.

The strong continuous induction effect based on isotype heterojunction transistors with different polymer modifications

2019 ◽  
Vol 74 ◽  
pp. 237-244 ◽  
Author(s):  
Yao Ni ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Hui Lin ◽  
Hang Yu ◽  
...  
Keyword(s):  
Induction Effect ◽  
Continuous Induction ◽  
Heterojunction Transistors

Single Event Transients Induced by Picosecond Pulsed X-Ray Absorption in III–V Heterojunction Transistors

2012 ◽  
Vol 59 (6) ◽  
pp. 2729-2738 ◽  
Author(s):  
D. M. Cardoza ◽  
S. D. LaLumondiere ◽  
M. A. Tockstein ◽  
S. C. Witczak ◽  
Y. Sin ◽  
...  
Keyword(s):  
Single Event ◽  
X Ray ◽  
Single Event Transients ◽  
X Ray Absorption ◽  
Heterojunction Transistors

Material and device considerations for selectively doped heterojunction transistors

1982 ◽  
Author(s):  
J.V. DiLorenzo ◽  
R. Dingle ◽  
M. Feuer ◽  
A.C. Gossard ◽  
R. Hendel ◽  
...  
Keyword(s):  
Heterojunction Transistors

Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors

1980 ◽  
Vol 27 (6) ◽  
pp. 1160-1164 ◽  
Author(s):  
J.-P. Bailbe ◽  
A. Marty ◽  
Pham Huu Hiep ◽  
G.E. Rey
Keyword(s):  
High Speed ◽  
Heterojunction Transistors
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