Quenching‐Resistant Multi‐Resonance TADF Emitter Realizes 40% External Quantum Efficiency in Narrowband Electroluminescence at High Doping Level

2021 ◽  
pp. 2106954
Author(s):  
Pengcheng Jiang ◽  
Jingsheng Miao ◽  
Xiaosong Cao ◽  
Han Xia ◽  
Ke Pan ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Doping Level ◽  
High Doping Level

Demonstration of ultra-small (0.2%) for mini-displays

2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency

scholarly journals Phenylalkylammonium passivation enables perovskite light emitting diodes with record high-radiance operational lifetime: the chain length matters

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  
Keyword(s):  
Chain Length ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Surface Defects ◽  
Theoretical Modelling ◽  
Ion Migration ◽  
Light Emitting ◽  
Operational Lifetime ◽  
Chain Lengths

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell

2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Influence Of Temperature ◽  
Cdte Solar Cell ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Influence Of Temperature On

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

scholarly journals Enhancing sub-bandgap external quantum efficiency by photomultiplication for narrowband organic near-infrared photodetectors

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jonas Kublitski ◽  
Axel Fischer ◽  
Shen Xing ◽  
Lukasz Baisinger ◽  
Eva Bittrich ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Optical Cavity ◽  
Hole Injection ◽  
Visible Range ◽  
Absorption Region ◽  
Electromagnetic Signals ◽  
Organic Photodetectors

AbstractDetection of electromagnetic signals for applications such as health, product quality monitoring or astronomy requires highly responsive and wavelength selective devices. Photomultiplication-type organic photodetectors have been shown to achieve high quantum efficiencies mainly in the visible range. Much less research has been focused on realizing near-infrared narrowband devices. Here, we demonstrate fully vacuum-processed narrow- and broadband photomultiplication-type organic photodetectors. Devices are based on enhanced hole injection leading to a maximum external quantum efficiency of almost 2000% at −10 V for the broadband device. The photomultiplicative effect is also observed in the charge-transfer state absorption region. By making use of an optical cavity device architecture, we enhance the charge-transfer response and demonstrate a wavelength tunable narrowband photomultiplication-type organic photodetector with external quantum efficiencies superior to those of pin-devices. The presented concept can further improve the performance of photodetectors based on the absorption of charge-transfer states, which were so far limited by the low external quantum efficiency provided by these devices.

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