scholarly journals Electrical Generation and Deletion of Magnetic Skyrmion‐Bubbles via Vertical Current Injection

2021 ◽  
pp. 2104406
Author(s):  
Seungmo Yang ◽  
Kyoung‐Woong Moon ◽  
Tae‐Seong Ju ◽  
Changsoo Kim ◽  
Hyun‐Joong Kim ◽  
...  
Keyword(s):  
Current Injection ◽  
Electrical Generation

scholarly journals Electrical Generation and Deletion of Magnetic Skyrmion‐Bubbles via Vertical Current Injection (Adv. Mater. 45/2021)

2021 ◽  
Vol 33 (45) ◽  
pp. 2170353
Author(s):  
Seungmo Yang ◽  
Kyoung‐Woong Moon ◽  
Tae‐Seong Ju ◽  
Changsoo Kim ◽  
Hyun‐Joong Kim ◽  
...  
Keyword(s):  
Current Injection ◽  
Electrical Generation

Prospective Transient Recovery Voltage Measurement of Short Circuit Testing Circuit by Reverse Current Injection

2019 ◽  
Vol 139 (8) ◽  
pp. 522-526
Author(s):  
Kyoya Nonaka ◽  
Tadashi Koshizuka ◽  
Eiichi Haginomori ◽  
Hisatoshi Ikeda ◽  
Takeshi Shinkai ◽  
...  
Keyword(s):  
Short Circuit ◽  
Reverse Current ◽  
Current Injection ◽  
Voltage Measurement ◽  
Circuit Testing ◽  
Transient Recovery Voltage ◽  
Recovery Voltage

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

Electron‐Affinity Substituent in 2,6‐Dicarbonitrile Diphenyl‐1λ 5 ‐Phosphinine (DCNP) Towards High‐Quality Organic Lasing and Electroluminescence under High Current Injection

2021 ◽  
pp. 2104529
Author(s):  
Xun Tang ◽  
Umamahesh Balijapalli ◽  
Daichi Okada ◽  
Buddhika S. B. Karunathilaka ◽  
Chathuranganie A. M. Senevirathne ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Current Injection ◽  
High Current ◽  
High Quality
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