Acceptor Modulation Strategies for Improving the Electron Transport in High‐Performance Organic Field‐Effect Transistors

2021 ◽  
pp. 2104325
Author(s):  
Jinyang Chen ◽  
Jie Yang ◽  
Yunlong Guo ◽  
Yunqi Liu
Keyword(s):  
Electron Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Anisotropic Strain Effect on Electron Transport in C60 Organic Field Effect transistors

2013 ◽  
Vol 1501 ◽  
Author(s):  
Akash Nigam ◽  
Günther Schwabegger ◽  
Mujeeb Ullah ◽  
Rizwan Ahmed ◽  
Ivan I. Fishchuk ◽  
...  
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Field Effect ◽  
High Performance ◽  
Tensile Strain ◽  
Field Effect Transistors ◽  
Compressive Strain ◽  
Strain Effect ◽  
Wearable Electronics ◽  
Organic Field Effect Transistors

ABSTRACTMechanical flexibility is one of the key advantages of organic semiconducting films in applications such as wearable-electronics or flexible displays. The present study is aimed at gaining deeper insight into the effect of strain on charge transport properties of the organic semiconductor films. We have fabricated high performance C60 top gate organic field effect transistors (OFET) on flexible substrates and characterized the devices by curling the substrates in concave and convex manner, to apply varying values of compressive and tensile strain, respectively. Electron mobility is found to increase with compressive strain and decrease with tensile strain. The observed strain effect is found to be strongly anisotropic with respect to the direction of flow of current. This observation on mobility is quantified using an Extended Gaussian Disorder Model (EGDM) for the hopping charge transport. We suggest that the observed strain dependence of the electron transport is dominated by a change in the effective charge hopping distance over the grain boundaries in polycrystalline C60 films.

High performance solution-processable tetrathienoacene (TTAR) based small molecules for organic field effect transistors (OFETs)

2017 ◽  
Vol 53 (43) ◽  
pp. 5898-5901 ◽  
Author(s):  
Sureshraju Vegiraju ◽  
Deng-Yi Huang ◽  
Pragya Priyanka ◽  
Yo-Shan Li ◽  
Xian-Lun Luo ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processable

DDTT-TTARexhibits the highest mobility of 0.81 cm2V−1s−1.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Indigo - From Jeans to Semiconductors: Indigo - A Natural Pigment for High Performance Ambipolar Organic Field Effect Transistors and Circuits (Adv. Mater. 3/2012)

2012 ◽  
Vol 24 (3) ◽  
pp. 321-321 ◽  
Author(s):  
Mihai Irimia-Vladu ◽  
Eric D. Głowacki ◽  
Pavel A. Troshin ◽  
Günther Schwabegger ◽  
Lucia Leonat ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Natural Pigment

scholarly journals High-Performance Organic Field-Effect Transistors with Ionic Liquids

Hyomen Kagaku ◽  
2013 ◽  
Vol 34 (4) ◽  
pp. 204-209
Author(s):  
Shimpei ONO ◽  
Tomo SAKANOUE ◽  
Shiro SEKI
Keyword(s):  
Ionic Liquids ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

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