Regioregular Narrow‐Bandgap n‐Type Polymers with High Electron Mobility Enabling Highly Efficient All‐Polymer Solar Cells

2021 ◽  
pp. 2102635
Author(s):  
Huiliang Sun ◽  
Bin Liu ◽  
Yunlong Ma ◽  
Jin‐Woo Lee ◽  
Jie Yang ◽  
...  
2015 ◽  
Vol 106 (16) ◽  
pp. 163902 ◽  
Author(s):  
Peiwen Lv ◽  
Shan-Ci Chen ◽  
Qingdong Zheng ◽  
Feng Huang ◽  
Kai Ding

2019 ◽  
Vol 7 (8) ◽  
pp. 3745-3751 ◽  
Author(s):  
Juan Chen ◽  
Guangda Li ◽  
Qinglian Zhu ◽  
Xia Guo ◽  
Qunping Fan ◽  
...  

Non-fullerene polymer solar cells based on a low bandgap polymer PTB7-Th and an ultra-narrow bandgap acceptor ACS8 exhibited an optimal PCE of 13.2%, indicating that the blend of PTB7-Th/ACS8 has potential for the practical applications of PSCs.


2021 ◽  
Vol 2145 (1) ◽  
pp. 012027
Author(s):  
R Thanimkan ◽  
B Namnuan ◽  
S Chatraphorn

Abstract The requirements of electron transport layer (ETL) for high efficiency Perovskite solar cells (PSCs) are, for example, appropriate band energy alignment, high electron mobility, high optical transmittance, high stability, and easy processing. SnO2 has attracted more attention as ETL for PSCs because it has diverse advantages, e.g., wide bandgap energy, excellent optical and chemical stability, high transparency, high electron mobility, and easy preparation. The SnO2 ETL was fabricated by RF magnetron sputtering technique to ensure the chemical composition and uniform layer thickness when compared to the use of chemical solution via spin-coating method. The RF power was varied from 60 - 150 W. The Ar sputtering gas pressure was varied from 1 × 10−3 - 6 × 10−3 mbar while keeping O2 partial pressure at 1 × 10−4 mbar. The thickness of SnO2 layer decreases as the Ar gas pressure increases resulting in the increase of sheet resistance. The surface morphology and optical transmission of the SnO2 ETL were investigated. It was found that the optimum thickness of SnO2 layer was approximately 35 - 40 nm. The best device shows Jsc = 27.4 mA/cm2, Voc = 1.03 V, fill factor = 0.63, and efficiency = 17.7%.


RSC Advances ◽  
2019 ◽  
Vol 9 (27) ◽  
pp. 15341-15349 ◽  
Author(s):  
Zhiqi Gu ◽  
Jin Wang ◽  
Bin Miao ◽  
Lei Zhao ◽  
Xinsheng Liu ◽  
...  

We propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor, where ethanolamine was utilized to functionalize the surface of GaN and provided amphoteric amine groups for bioassay application.


2016 ◽  
Vol 52 (5) ◽  
pp. 970-973 ◽  
Author(s):  
Liangzheng Zhu ◽  
Zhipeng Shao ◽  
Jiajiu Ye ◽  
Xuhui Zhang ◽  
Xu Pan ◽  
...  

Perovskite oxide BaSnO3 with high electron mobility and a perovskite structure was first used as an electron-transporting layer in perovskite solar cells. After optimization, the resulting mp-BSO device can perform as well as the mp-TiO2 one and even better.


2015 ◽  
Vol 3 (19) ◽  
pp. 4890-4902 ◽  
Author(s):  
Jilin Jia ◽  
Liping Zhu ◽  
Ying Wei ◽  
Zhongbin Wu ◽  
Hui Xu ◽  
...  

Triazine and triphenylphosphine oxide hybrids xTPOTZ were constructed as electron-transporting materials with triplet energy beyond 2.95 eV and high electron mobility for highly efficient blue phosphorescent light-emitting diodes.


Sign in / Sign up

Export Citation Format

Share Document