scholarly journals Terahertz Spin‐to‐Charge Conversion by Interfacial Skew Scattering in Metallic Bilayers

2021 ◽  
pp. 2006281
Author(s):  
Oliver Gueckstock ◽  
Lukáš Nádvorník ◽  
Martin Gradhand ◽  
Tom Sebastian Seifert ◽  
Genaro Bierhance ◽  
...  
Keyword(s):  
2019 ◽  
Vol 100 (12) ◽  
Author(s):  
Toshiya Ishikawa ◽  
Hiroshi Akera
Keyword(s):  

2017 ◽  
Vol 29 (41) ◽  
pp. 415802 ◽  
Author(s):  
Qiang Zhang ◽  
Yan Wen ◽  
Yuelei Zhao ◽  
Peng Li ◽  
Xin He ◽  
...  

2D Materials ◽  
2021 ◽  
Author(s):  
Mikhail M Glazov

Abstract A theory of the valley and spin Hall effects and resulting accumulation of the valley and spin polarization is developed for ultraclean channels made of two-dimensional semiconductors where the electron mean free path due to the residual disorder or phonons exceeds the channel width. Both ballistic and hydrodynamic regimes of the electron transport are studied. The polarization accumulation is determined by interplay of the anomalous velocity, side-jump and skew scattering effects. In the hydrodynamic regime, where the electron-electron scattering is dominant, the valley and spin current generation and dissipation by the electron-electron collisions are taken into account. The accumulated polarization magnitude and its spatial distribution depend strongly on the transport regime. The polarization is much larger in the hydrodynamic regime as compared to the ballistic one. Significant valley and spin polarization arises in the immediate vicinity of the channel edges due to the side-jump and skew scattering mechanisms.


1980 ◽  
Vol 41 (C8) ◽  
pp. C8-458-C8-458
Author(s):  
L. E. Ballentine

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