scholarly journals Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L 1 0 FePt Single Layer

2020 ◽  
Vol 32 (31) ◽  
pp. 2002607 ◽  
Author(s):  
Meng Tang ◽  
Ka Shen ◽  
Shijie Xu ◽  
Huanglin Yang ◽  
Shuai Hu ◽  
...  
Keyword(s):  
Single Layer ◽  
Spin Torque ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

scholarly journals Magnetization switching of a perpendicular nanomagnet induced by vertical nonlocal injection of pure spin current

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Hirofumi Suto ◽  
Tazumi Nagasawa ◽  
Taro Kanao ◽  
Kenichiro Yamada ◽  
Koichi Mizushima
Keyword(s):  
Spin Injection ◽  
Spin Current ◽  
Pure Spin ◽  
Spin Torque ◽  
Device Structure ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Perpendicular Magnetization ◽  
Vertical Injection ◽  
Current Flows

AbstractInjection of pure spin current using a nonlocal geometry is a promising method for controlling magnetization in spintronic devices from the viewpoints of increasing freedom in device structure and avoiding problems related to charge current. Here, we report an experimental demonstration of magnetization switching of a perpendicular magnetic nanodot induced by vertical injection of pure spin current from a spin polarizer with perpendicular magnetization. In comparison with direct spin injection, the current amplitude required for magnetization switching is of the same order and shows smaller asymmetry between parallel-to-antiparallel and antiparallel-to-parallel switching. Simulation of spin accumulation reveals that, in the case of nonlocal spin injection, the spin torque is symmetric between the parallel and antiparallel configuration because current flows through only the spin polarizer, not the magnetic nanodot. This characteristic of nonlocal spin injection is the origin of the smaller asymmetry of the switching current and can be advantageous in spintronic applications.

Quantum theory of spin-torque driven magnetization switching

2021 ◽  
Vol 103 (9) ◽  
Author(s):  
Ping Tang ◽  
Xiufeng Han ◽  
Shufeng Zhang
Keyword(s):  
Quantum Theory ◽  
Spin Torque ◽  
Magnetization Switching

Resonant magnetization switching induced by spin-torque-driven oscillations and its use in three-dimensional magnetic storage applications

2015 ◽  
Vol 8 (10) ◽  
pp. 103001 ◽  
Author(s):  
Kiwamu Kudo ◽  
Hirofumi Suto ◽  
Tazumi Nagasawa ◽  
Koichi Mizushima ◽  
Rie Sato
Keyword(s):  
Three Dimensional ◽  
Spin Torque ◽  
Magnetic Storage ◽  
Magnetization Switching

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

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