scholarly journals Electronic‐Grade High‐Quality Perovskite Single Crystals by a Steady Self‐Supply Solution Growth for High‐Performance X‐ray Detectors

2020 ◽  
Vol 32 (33) ◽  
pp. 2001540 ◽  
Author(s):  
Wenzhen Wang ◽  
Hua Meng ◽  
Huanzhen Qi ◽  
Haitao Xu ◽  
Wenbin Du ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Solution Growth ◽  
High Quality ◽  
X Ray

High‐Quality Cuboid CH 3 NH 3 PbI 3 Single Crystals for High Performance X‐Ray and Photon Detectors

2018 ◽  
Vol 29 (6) ◽  
pp. 1806984 ◽  
Author(s):  
Fei Ye ◽  
Hong Lin ◽  
Haodi Wu ◽  
Lu Zhu ◽  
Zhanfeng Huang ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Photon Detectors ◽  
High Quality ◽  
X Ray

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

Photodiodes based on MAPbBr3/Bi3+ doped MAPbCl3 single crystals heterojunction for X-ray detection

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yuzhu Pan ◽  
Xin Wang ◽  
Jingda Zhao ◽  
Yubing Xu ◽  
Yuwei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystals ◽  
External Electric Field ◽  
High Performance ◽  
X Ray

Perovskites single crystals (PSCs) could be used to made high performance photoelectric detectors due to its superior optoelectronic characteristics. Generally, external electric field need to be applied in the PSCs-based...

scholarly journals Lead-free halide perovskite Cs3Bi2Br9 single crystals for high-performance X-ray detection

2021 ◽  
Author(s):  
Xiang Li ◽  
Xinyuan Du ◽  
Peng Zhang ◽  
Yunqiu Hua ◽  
Lin Liu ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Lead Free ◽  
X Ray ◽  
Halide Perovskite

Two-dimensional (PEA)2PbBr4 perovskite single crystals for a high performance UV-detector

2019 ◽  
Vol 7 (6) ◽  
pp. 1584-1591 ◽  
Author(s):  
Yunxia Zhang ◽  
Yucheng Liu ◽  
Zhuo Xu ◽  
Haochen Ye ◽  
Qingxian Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
High Performance ◽  
Two Dimensional ◽  
Uv Detector ◽  
High Quality ◽  
Photo Response ◽  
Response Performance

A centimeter-sized high-quality two-dimensional (PEA)2PbBr4 single crystal was prepared, which exhibited superior UV photo-response performance.

Growth and characterization of ternary BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 ferroelectric single crystals with high Curie temperature

CrystEngComm ◽  
2020 ◽  
Vol 22 (27) ◽  
pp. 4544-4551
Author(s):  
Zeng Luo ◽  
Jian Zhuang ◽  
Zenghui Liu ◽  
Nan Zhang ◽  
Wei Ren ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Single Crystals ◽  
Solution Growth ◽  
High Curie Temperature ◽  
High Quality ◽  
Domain Structures ◽  
Growth Method ◽  
Top Seeded Solution Growth

BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 single crystals with high quality have been successfully grown by the top-seeded solution growth method and the single ferroelastic domain structures and ferroelectric behaviors have also been reviewed.

Synchrotron X-Ray Topographic Study of Defects in High Quality, Flux Grown Ktiopo4 Single Crystals

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
L. K. Cheng ◽  
J. D. Bierlein
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Domain Walls ◽  
Defect Structures ◽  
Growth Sector ◽  
High Quality ◽  
X Ray ◽  
Free Region ◽  
Ferroelectric Domains ◽  
Section Topography

ABSTRACTDefect structures in large, high quality flux-grown KTP single crystals have been studied by using synchrotron white beam X-ray topography. Growth dislocations, inclusions, growth sector boundaries, growth bands and surface micro-scratches were imaged. A number of planar defects in the dislocation-free region are imaged and determined to be inversion twin lamellae (lamellar ferroelectric domains) which have never been previously reported in KTP crystals. These inversion twin lamellae were also studied by section topography. Detailed analysis of observed contrast revealed that the domain walls bounding the lamellae are faulted with a fault vector of ½[0±1±1]. This fault vector seems to be consistent with the atomic structure of KTP. A detailed analysis is presented and discussed.

scholarly journals Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

2016 ◽  
Vol 34 (2) ◽  
pp. 297-301 ◽  
Author(s):  
Dong Jin Kim ◽  
Joon-Ho Oh ◽  
Han Soo Kim ◽  
Young Soo Kim ◽  
Manhee Jeong ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Middle Part ◽  
High Quality ◽  
Single Crystalline ◽  
Crystalline Sample ◽  
Vertical Bridgman ◽  
Stockbarger Method

AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.

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